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MMQA15VT3

Onsemi

MMQA15VT3 by Onsemi

MMQA15VT3 by Onsemi is a Zener technology TRANS VOLTAGE SUPPRESSOR DIODE with 4 elements in a COMMON ANODE configuration. It has a Breakdown Voltage of 15V and Max Clamping Voltage of 21.7V, making it ideal for transient suppression applications in electronics. With a max power dissipation of 0.225W and operating temperature range from -55 to 150 °C, it offers reliable protection against voltage spikes in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,831 parts In-Stock

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Digiode

USA . 1,194 parts In-Stock

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1,194

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Distributors (Availability)

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Kulean Microsystems

USA . 7,760 parts In-Stock

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7,760

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TANS Electronics

Latvia . 7,014 parts In-Stock

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Problanco Electronics

Mexico . 6,620 parts In-Stock

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SupplyDigital Components

Austria . 4,747 parts In-Stock

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Corphita

USA . 309 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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UHIMA Technologies

Türkiye . 32 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the MMQA15VT3 by Onsemi, a top-tier manufacturer known for their quality products. This transient suppression device offers unparalleled reliability and performance, ensuring your equipment stays safe from voltage spikes and surges. Ideal for a wide range of applications, this product provides peace of mind and seamless operation. Trust in Onsemi's expertise and invest in the MMQA15VT3 for superior protection and long-term value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

Can handle high power surges and spikes, protecting the connected devices effectively.

Nominal Breakdown Voltage: 15 V

Ensures reliable protection against overvoltage conditions at a specified voltage level.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, providing efficient protection.

Technical Specifications

Transient Suppression Devices MMQA15VT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.75 V

Minimum Breakdown Voltage:

14.25 V

Nominal Breakdown Voltage:

15 V

Maximum Clamping Voltage:

21.7 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

11 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMQA15VT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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