Loading...

MMQA15VT1

Onsemi

MMQA15VT1 by Onsemi

MMQA15VT1 by Onsemi is a transient suppression device with 4 common anode elements. It has a max non-repetitive peak reverse power dissipation of 150W and breakdown voltage of 15V. Ideal for applications requiring protection against voltage transients in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,823 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,823

-

-

-

-

Digiode

USA . 1,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,558

-

-

-

-

Prism Electronics

USA . 149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

149

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 5,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,871

-

-

-

-

Authorized Procurement Solutions

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,800

-

-

-

-

Problanco Electronics

Mexico . 2,335 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,335

-

-

-

-

Corphita

USA . 1,508 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,508

-

-

-

-

Kulean Microsystems

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,479

-

-

-

-

SupplyDigital Components

Austria . 1,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,075

-

-

-

-

Corohmni

South Africa . 480 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

480

-

-

-

-

UHIMA Technologies

Türkiye . 376 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

376

-

-

-

-

Perfect Parts

USA . 167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

167

-

-

-

-

Overview

Discover the MMQA15VT1 by Onsemi, a top-of-the-line transient suppression device that offers unparalleled protection against voltage spikes. Manufactured by Onsemi, a trusted industry leader known for their high-quality products, this diode is perfect for a wide range of applications. With its common anode configuration and small outline package style, this diode provides reliable performance in a compact design. Experience peace of mind knowing that your electronics are safeguarded with the MMQA15VT1, offering maximum clamping voltage of 21.7V and superior protection against power surges. Elevate your devices with the exceptional quality and reliability of Onsemi's MMQA15VT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

Capable of handling high power surges, making it suitable for protecting sensitive electronic equipment from transient overvoltages.

Nominal Breakdown Voltage: 15 V

Offers reliable protection by quickly diverting excess voltage away from the connected devices when the voltage exceeds this threshold.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising its performance, ensuring continuous protection under various conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Uses specialized diodes that can respond quickly to overvoltage events, minimizing the risk of damage to connected equipment.

Technical Specifications

Transient Suppression Devices MMQA15VT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.8 V

Minimum Breakdown Voltage:

14.3 V

Nominal Breakdown Voltage:

15 V

Maximum Clamping Voltage:

21.7 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

11 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMQA15VT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20