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SZESD7351XV2T1G

Onsemi

SZESD7351XV2T1G by Onsemi

SZESD7351XV2T1G by Onsemi is a single transient suppression device with a breakdown voltage of 5V. It features a unidirectional diode type and avalanche technology, suitable for protecting electronic circuits from voltage spikes. With a max clamping voltage of 10V, it is ideal for applications requiring reliable overvoltage protection in harsh environments.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,011,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

1,011,000

-

-

-

$0.052

Rochester

USA . 972,000 parts In-Stock

1+ parts

-

100+ parts

$0.097

1k+ parts

$0.080

10k+ parts

$0.071

972,000

-

$0.097

$0.080

$0.071

Verical

USA . 582,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.089

582,000

-

-

-

$0.089

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.071

-

-

-

Digiode

USA . 2,407 parts In-Stock

1+ parts

$0.075

100+ parts

-

1k+ parts

-

10k+ parts

-

2,407

$0.075

-

-

-

Vyrian

USA . 6,522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,522

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,010,992 parts In-Stock

1+ parts

$0.044

100+ parts

$0.043

1k+ parts

$0.043

10k+ parts

-

1,010,992

$0.044

$0.043

$0.043

-

Ampacity Inc.

Singapore . 1,010,826 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

-

10k+ parts

-

1,010,826

$0.044

-

-

-

Corohmni

South Africa . 140 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

-

10k+ parts

-

140

$0.052

-

-

-

Argo Parts USA

USA . 1,725 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.068

1,725

$0.071

-

-

$0.068

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

$0.067

10k+ parts

$0.066

100

$0.071

-

$0.067

$0.066

Corphita

USA . 811 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

811

$0.071

-

-

-

Aztec Data Supply Inc.

USA . 195 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

-

195

$0.100

-

-

-

AZTECH Wire

Italy . 752 parts In-Stock

1+ parts

$10.310

100+ parts

-

1k+ parts

-

10k+ parts

-

752

$10.310

-

-

-

Continental Prestige Electronics

USA . 390,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.052

10k+ parts

-

390,000

-

-

$0.052

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

TANS Electronics

Latvia . 7,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,790

-

-

-

-

Problanco Electronics

Mexico . 7,782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,782

-

-

-

-

SupplyDigital Components

Austria . 6,119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,119

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,119

-

-

-

-

Kulean Microsystems

USA . 5,432 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,432

-

-

-

-

UHIMA Technologies

Türkiye . 29 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

29

-

-

-

-

Overview

Discover the superior protection offered by the SZESD7351XV2T1G from Onsemi, a leading manufacturer in transient suppression devices. Perfect for a wide range of applications, this single-configured diode is designed to provide reliable safeguarding against voltage spikes and surges. With a robust construction and high-quality materials, this product ensures optimal performance even in extreme conditions. Trust Onsemi to deliver innovative solutions that prioritize customer satisfaction and product excellence. Upgrade your electronics with the SZESD7351XV2T1G and enjoy peace of mind knowing your devices are protected.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and strength are important factors.

Config: SINGLE

The single configuration of this device simplifies installation and reduces the chances of errors, making it user-friendly.

Surface Mount: YES

Being surface mountable allows for easy integration into PCB designs, saving space and making assembly more efficient.

Nominal Breakdown Voltage: 5 V

The 5V breakdown voltage provides reliable protection against transient voltage spikes, ensuring the safety of sensitive components.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and alignment on circuit boards, facilitating smooth installation.

No. of Terminals: 2

The two terminals provide a simple and reliable connection, enhancing the overall stability and performance of the device.

Package Style (Meter): SMALL OUTLINE

The small outline package style conserves space on the PCB, making it suitable for compact designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand demanding environmental conditions without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that this device remains functional in a wide range of temperatures, making it versatile.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers enhanced solderability and corrosion resistance, improving the overall reliability of the product.

Technical Specifications

Transient Suppression Devices SZESD7351XV2T1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE, ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

5 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.15 W

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SZESD7351XV2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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