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RECTANGULAR Transient Suppression Devices 2,400+

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMDJ85A-HRA by Littelfuse

SMDJ85A-HRA

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

104 V

94.4 V

99.2 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

6.5 W

UL RECOGNIZED

85 V

2 uA

85 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

40

SMDJ90A-HRAT7 by Littelfuse

SMDJ90A-HRAT7

Littelfuse

SMDJ90A-HRAT7 by Littelfuse is a unidirectional Trans Voltage Suppressor Diode with a max clamping voltage of 146V. It has a breakdown voltage of 111V and can handle up to 3000W peak reverse power dissipation. Ideal for transient suppression in electronic circuits, it operates b/w -65°C to 150°C temperatures.

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

111 V

100 V

105.5 V

146 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

6.5 W

UL RECOGNIZED

90 V

2 uA

90 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

40

SMDJ90A-HRA by Littelfuse

SMDJ90A-HRA

Littelfuse

SMDJ90A-HRA by Littelfuse is a unidirectional Trans Voltage Suppressor Diode with 90V reverse voltage, 3000W peak power dissipation, and 2uA max reverse current. It is ideal for transient suppression in electronic circuits, offering UL recognized reliability. The diode's avalanche technology ensures efficient protection in a compact small outline package.

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

111 V

100 V

105.5 V

146 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AB

R-PDSO-C2

e3

1

3000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

6.5 W

UL RECOGNIZED

90 V

2 uA

90 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

40

P6SMB68AR5G by Taiwan Semiconductor

P6SMB68AR5G

Taiwan Semiconductor

P6SMB68AR5G by Taiwan Semiconductor is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 58.1V VRWM, AVALANCHE tech, and UNI POLARITY. It's used for transient suppression in automotive electronics due to its AEC-Q101 compliance and -65 to 150°C operating range.

EXCELLENT CLAMPING CAPABILITY

71.4 V

64.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

1

600 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

3 W

AEC-Q101

58.1 V

YES

AVALANCHE

PURE TIN

C BEND

DUAL

ESD5382MUT5G by Onsemi

ESD5382MUT5G

Onsemi

ESD5382MUT5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 14.2V breakdown voltage, ideal for transient suppression applications. It features avalanche technology, 22V clamping voltage, and operates b/w -55 to 150 °C. Suitable for protecting sensitive electronics from ESD events per IEC-61000-4-2, 4-4 standards.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

14.2 V

14.2 V

22 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

.3 W

IEC-61000-4-2, 4-4

3 V

Transient Suppressors

YES

AVALANCHE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

BOTTOM

NOT SPECIFIED

SMF20A-E3-18 by Vishay Intertechnology

SMF20A-E3-18

Vishay Intertechnology

Vishay Intertechnology's SMF20A-E3-18 is a single avalanche diode with 1000W power dissipation and 23.4V breakdown voltage. Ideal for transient suppression in electronics, it operates b/w -55 to 150°C, complies with IEC-61000-4-5 standard, and has a unidirectional polarity.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

24.6 V

22.2 V

23.4 V

32.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

20 V

.1 uA

20 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF20A-HM3-18 by Vishay Intertechnology

SMF20A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF20A-HM3-18 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, ideal for transient suppression applications. Featuring a 23.4V breakdown voltage and 32.4V max clamping voltage, it operates b/w -55°C to 150°C. This avalanche technology diode has a matte tin finish and meets AEC-Q101 & IEC-61000-4-5 standards.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

24.6 V

22.2 V

23.4 V

32.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

20 V

.1 uA

20 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF20A-M3-18 by Vishay Intertechnology

SMF20A-M3-18

Vishay Intertechnology

Vishay Intertechnology's SMF20A-M3-18 is a single unidirectional transient voltage suppressor diode with 1000W peak power dissipation and 23.4V breakdown voltage. Ideal for surge protection in applications requiring a compact, surface-mount package with a max operating temperature of 150°C.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

24.6 V

22.2 V

23.4 V

32.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

20 V

.1 uA

20 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF26A-HE3-08 by Vishay Intertechnology

SMF26A-HE3-08

Vishay Intertechnology

Vishay Intertechnology's SMF26A-HE3-08 is a unidirectional avalanche diode with 1000W peak power dissipation, 30.45V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its compact rectangular package and high clamping voltage of 42.1V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

32 V

28.9 V

30.45 V

42.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

26 V

.1 uA

26 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF30A-E3-18 by Vishay Intertechnology

SMF30A-E3-18

Vishay Intertechnology

Vishay Intertechnology's SMF30A-E3-18 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, 35.1V breakdown voltage, and 0.1uA max reverse current. Ideal for transient suppression in electronics, it operates b/w -55°C to 150°C and complies with IEC-61000-4-5 standard.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

36.9 V

33.3 V

35.1 V

48.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

30 V

.1 uA

30 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF30A-HE3-18 by Vishay Intertechnology

SMF30A-HE3-18

Vishay Intertechnology

Vishay Intertechnology's SMF30A-HE3-18 is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 1000W power dissipation, 35.1V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, telecommunications equipment, and industrial applications.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

36.9 V

33.3 V

35.1 V

48.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

30 V

.1 uA

30 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF30A-M3-18 by Vishay Intertechnology

SMF30A-M3-18

Vishay Intertechnology

Vishay Intertechnology's SMF30A-M3-18 is a unidirectional avalanche diode with 1000W peak power dissipation, 35.1V breakdown voltage, and 48.4V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation. Package style: small outline, surface mountable with matte tin terminals.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

36.9 V

33.3 V

35.1 V

48.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

30 V

.1 uA

30 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF36A-HE3-08 by Vishay Intertechnology

SMF36A-HE3-08

Vishay Intertechnology

Vishay Intertechnology's SMF36A-HE3-08 is a single unidirectional transient suppression diode with a max power dissipation of 1000W. With a breakdown voltage of 42.15V, it offers protection against voltage spikes in applications such as automotive electronics and industrial equipment. Operating temperature ranges from -55 to 150°C, making it suitable for harsh environments.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

44.3 V

40 V

42.15 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

36 V

.1 uA

36 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF36A-HM3-18 by Vishay Intertechnology

SMF36A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF36A-HM3-18 is a single avalanche diode with 1000W power dissipation, 42.15V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

44.3 V

40 V

42.15 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

36 V

.1 uA

36 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-E3-18 by Vishay Intertechnology

SMF40A-E3-18

Vishay Intertechnology

Vishay Intertechnology's SMF40A-E3-18 is a unidirectional avalanche diode with 1000W peak power dissipation, ideal for transient suppression in electronic circuits. Featuring a breakdown voltage of 46.75V and max clamping voltage of 64.5V, it operates b/w -55°C to 150°C temperatures. This surface-mount device conforms to IEC-61000-4-5 standards, making it suitable for surge protection applications.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-HE3-08 by Vishay Intertechnology

SMF40A-HE3-08

Vishay Intertechnology

Vishay Intertechnology's SMF40A-HE3-08 is a unidirectional avalanche diode with 1000W peak power dissipation, 46.75V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its compact small outline package and high clamping voltage of 64.5V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF40A-HM3-18 by Vishay Intertechnology

SMF40A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF40A-HM3-18 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, 46.75V breakdown voltage, and 0.1uA max reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its AEC-Q101 compliance and high clamping voltage of 64.5V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

49.1 V

44.4 V

46.75 V

64.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

40 V

.1 uA

40 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF58A-HM3-08 by Vishay Intertechnology

SMF58A-HM3-08

Vishay Intertechnology

Vishay Intertechnology's SMF58A-HM3-08 is a unidirectional Trans Voltage Suppressor Diode with 1000W peak power dissipation, 67.6V breakdown voltage, and 95V max clamping voltage. Ideal for transient suppression in automotive electronics, adhering to AEC-Q101 and IEC-61000-4-5 standards.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

70.8 V

64.4 V

67.6 V

95 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

58 V

.1 uA

58 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF58A-HM3-18 by Vishay Intertechnology

SMF58A-HM3-18

Vishay Intertechnology

Vishay Intertechnology's SMF58A-HM3-18 is a single avalanche diode with 1000W power dissipation, 67.6V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, adhering to AEC-Q101 and IEC-61000-4-5 standards. Operates b/w -55°C to 150°C with a max clamping voltage of 95V.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

70.8 V

64.4 V

67.6 V

95 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

58 V

.1 uA

58 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMF5V0A-HE3-18 by Vishay Intertechnology

SMF5V0A-HE3-18

Vishay Intertechnology

Vishay Intertechnology's SMF5V0A-HE3-18 is a single avalanche diode with 1000W peak power dissipation, 6.75V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics, telecommunications equipment, and industrial applications due to its compact rectangular package and unidirectional polarity.

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

7.1 V

6.4 V

6.75 V

9.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

2.5 V

DO-219AB

R-PDSO-F2

e3

1

1000 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-5

5 V

5 uA

5 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

ESD207B102ELSE6327XTSA1 by Infineon Technologies

ESD207B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD207B102ELSE6327XTSA1 is a single bidirectional transient voltage suppressor diode with 3.3V max repetitive peak reverse voltage and avalanche technology. It operates b/w -40°C to 125°C, ideal for protecting electronic components in various applications requiring robust ESD protection.

3.65 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD0P8RFLE6327XTSA1 by Infineon Technologies

ESD0P8RFLE6327XTSA1

Infineon Technologies

Infineon Technologies' ESD0P8RFLE6327XTSA1 is a Transient Suppression Device with separate configuration and 2 elements. It is surface mountable and has a rectangular package shape. With a max breakdown voltage of 15V, it is commonly used as a trans voltage suppressor diode in various applications.

15 V

12 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD1P0RFSH6327XTSA1 by Infineon Technologies

ESD1P0RFSH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

15 V

12 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

4

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

70 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD1P0RFWH6327XTSA1 by Infineon Technologies

ESD1P0RFWH6327XTSA1

Infineon Technologies

ESD1P0RFWH6327XTSA1 by Infineon: Transient Suppressor Diode with 70V Breakdown Voltage, 12V Clamping Voltage, and Avalanche Technology. Ideal for protecting sensitive electronics from voltage spikes in applications like consumer electronics and industrial equipment.

ULTRA LOW CAPACITANCE

15 V

12 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

70 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

ESD5V0S1U03WE6327HTSA1 by Infineon Technologies

ESD5V0S1U03WE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

8 V

5.5 V

6.7 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

600 W

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5

5 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V0S2U06E6327HTSA1 by Infineon Technologies

ESD5V0S2U06E6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

8 V

5.5 V

6.7 V

11 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

600 W

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

5 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V0S5USH6327XTSA1 by Infineon Technologies

ESD5V0S5USH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

7.7 V

5.7 V

6.7 V

9.3 V

COMMON ANODE, 5 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

130 W

5

6

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

GULL WING

DUAL

NOT SPECIFIED

ESD5V3L1U02LRHE6327XTSA1 by Infineon Technologies

ESD5V3L1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

80 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3U4RRSH6327XTSA1 by Infineon Technologies

ESD5V3U4RRSH6327XTSA1

Infineon Technologies

ESD5V3U4RRSH6327XTSA1 by Infineon is a single avalanche diode with 6.3V breakdown voltage and 50W peak power dissipation. It is used for transient suppression in electronics, offering unidirectional protection with a max clamping voltage of 15V. Ideal for surface mount applications, it operates b/w -55°C to 125°C temperature range.

6.3 V

6.3 V

15 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

e3

1

50 W

1

6

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

6 V

Transient Suppressors

YES

AVALANCHE

TIN

GULL WING

DUAL

ESD8V0R1B02LRHE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0R1B02LSE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LRHE6327XTSA1 by Infineon Technologies

ESD0P2RF02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LSE6327XTSA1 by Infineon Technologies

ESD0P2RF02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P4RFLE6327XTSA1 by Infineon Technologies

ESD0P4RFLE6327XTSA1

Infineon Technologies

ESD0P4RFLE6327XTSA1 by Infineon Tech: 2-element TRANS VOLTAGE SUPPRESSOR DIODE with 50V max reverse voltage, 6V clamping voltage. AVALANCHE tech for transient suppression in electronics, temp range -55 to 150 °C. Ideal for surface mount applications needing reliable ESD protection.

9 V

6 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD102U405LE6327XTSA1 by Infineon Technologies

ESD102U405LE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

7.4 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N5

e4

1

750 W

4

5

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD110B102ELSE6327XTSA1 by Infineon Technologies

ESD110B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD110B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 18.5V max repetitive peak reverse voltage and 44V clamping voltage. It operates b/w -40 to 125 °C, making it ideal for transient suppression in electronic devices. The chip carrier package with gold finish and bidirectional polarity enhances its performance in protecting against voltage spikes.

ULTRA LOW CAPACITANCE

29 V

44 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

58 W

1

2

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD18VU1B02LSE6327XTSA1 by Infineon Technologies

ESD18VU1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD205B102ELSE6327XTSA1 by Infineon Technologies

ESD205B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD205B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 8V breakdown voltage and 30W peak power dissipation. Ideal for transient suppression in applications requiring bidirectional protection, such as consumer electronics and industrial equipment.

LOW CAPACITANCE

8 V

8.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

30 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD206B102ELSE6327XTSA1 by Infineon Technologies

ESD206B102ELSE6327XTSA1

Infineon Technologies

ESD206B102ELSE6327XTSA1 by Infineon is a SINGLE TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, AVALANCHE technology, and bidirectional polarity. It is used for transient suppression in applications requiring protection against voltage spikes in the range of -55 to 125°C.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD3V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD3V3U4ULCE6327XTSA1 by Infineon Technologies

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 9; Surface Mount: YES; Package Shape: RECTANGULAR;

11 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N9

e4

1

4

9

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3XU1USE6327XTSA1 by Infineon Technologies

ESD3V3XU1USE6327XTSA1

Infineon Technologies

ESD3V3XU1USE6327XTSA1 by Infineon is a unidirectional Trans Voltage Suppressor Diode with 3.3V peak reverse voltage, operating from -40 to 125°C. It uses avalanche technology in a chip carrier package for surface mount applications, providing transient suppression in electronic circuits.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LSE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V5S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

Infineon's ESD5V5S1B02LRHE6327XTSA1 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, ideal for transient suppression. With 150W power dissipation and -55 to 125 °C operating range, it's suitable for protecting sensitive electronics in various applications.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

150 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0L2B03LE6327XTMA1 by Infineon Technologies

ESD8V0L2B03LE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

8.5 V

8.5 V

26 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N3

e4

1

2

3

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD112B102ELSE6327XTSA1 by Infineon Technologies

ESD112B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD112B102ELSE6327XTSA1 is a single bidirectional Trans Voltage Suppressor Diode with 7V breakdown voltage, ideal for transient suppression. With avalanche technology and silicon diode element, it operates b/w -55°C to 125°C. This chip carrier package has gold terminal finish and is surface mountable.

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

AK10-530C by Littelfuse

AK10-530C

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR; Polarity: BIDIRECTIONAL;

619 V

560 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

e4

3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

260

BIDIRECTIONAL

IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED

530 V

NO

AVALANCHE

GOLD

THROUGH-HOLE

10