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SMF26A-HE3-08

Vishay Intertechnology

SMF26A-HE3-08 by Vishay Intertechnology

Vishay Intertechnology's SMF26A-HE3-08 is a unidirectional avalanche diode with 1000W peak power dissipation, 30.45V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its compact rectangular package and high clamping voltage of 42.1V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Vyrian

USA . 16,519 parts In-Stock

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16,519

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 531 parts In-Stock

1+ parts

$1.010

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531

$1.010

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AZTECH Wire

Italy . 629 parts In-Stock

1+ parts

$8.268

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629

$8.268

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Kepictronics

USA . 125,600 parts In-Stock

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125,600

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Metaverse IC Inc.

Canada . 125,600 parts In-Stock

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125,600

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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60,000

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Continental Prestige Electronics

USA . 4,790 parts In-Stock

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4,790

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Argo Parts USA

USA . 3,852 parts In-Stock

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3,852

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Enhance the protection of your electronic devices with Vishay Intertechnology's SMF26A-HE3-08 Transient Suppression Device. Designed for reliability and durability, this product offers peace of mind against voltage spikes and surges. With a maximum clamping voltage of 42.1V and a nominal breakdown voltage of 30.45V, this diode is ideal for a wide range of applications. Trust in Vishay's expertise and invest in quality protection for your valuable equipment today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides excellent insulation and protection, enhancing the durability and reliability of the device.

Nominal Breakdown Voltage: 30.45 V

The higher breakdown voltage ensures effective protection against voltage spikes and surges, safeguarding connected equipment.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and improves overall efficiency of the device.

Maximum Repetitive Peak Reverse Voltage: 26 V

The device can handle high repetitive peak reverse voltage, providing enhanced protection over multiple instances of voltage spikes.

Technology: AVALANCHE

Avalanche technology allows for quick and efficient response to voltage transients, ensuring swift protection for connected circuits.

Technical Specifications

Transient Suppression Devices SMF26A-HE3-08 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

Maximum Breakdown Voltage:

32 V

Minimum Breakdown Voltage:

28.9 V

Nominal Breakdown Voltage:

30.45 V

Maximum Clamping Voltage:

42.1 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.5 V

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

26 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

26 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF26A-HE3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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