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SMF5V0A-HE3-18

Vishay Intertechnology

SMF5V0A-HE3-18 by Vishay Intertechnology

Vishay Intertechnology's SMF5V0A-HE3-18 is a single avalanche diode with 1000W peak power dissipation, 6.75V breakdown voltage, and 5uA reverse current. Ideal for transient suppression in automotive electronics, telecommunications equipment, and industrial applications due to its compact rectangular package and unidirectional polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,949 parts In-Stock

1+ parts

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7,949

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$0.090

100+ parts

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1,000

$0.090

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Ampacity Inc.

Singapore . 1,548 parts In-Stock

1+ parts

$2.010

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1,548

$2.010

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AZTECH Wire

Italy . 472 parts In-Stock

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$18.359

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472

$18.359

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Continental Prestige Electronics

USA . 1,306 parts In-Stock

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1,306

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Argo Parts USA

USA . 694 parts In-Stock

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694

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SMF5V0A-HE3-18. With a maximum non-repetitive peak reverse power dissipation of 1000W and a nominal breakdown voltage of 6.75V, this product offers top-notch quality and performance. Ideal for applications requiring protection against voltage transients, this device ensures your equipment stays safe and operates smoothly. Trust Vishay Intertechnology for superior products that deliver value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high maximum power dissipation, this device can handle surges and transients effectively without getting damaged.

Nominal Breakdown Voltage: 6.75 V

The breakdown voltage indicates the voltage at which the device starts conducting. This value ensures protection against voltage spikes below 6.75V.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this device can function effectively in a wide range of environmental conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type specifically designed for transient voltage suppression ensures efficient protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices SMF5V0A-HE3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

Maximum Breakdown Voltage:

7.1 V

Minimum Breakdown Voltage:

6.4 V

Nominal Breakdown Voltage:

6.75 V

Maximum Clamping Voltage:

9.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.5 V

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF5V0A-HE3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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