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SMF58A-HM3-18

Vishay Intertechnology

SMF58A-HM3-18 by Vishay Intertechnology

Vishay Intertechnology's SMF58A-HM3-18 is a single avalanche diode with 1000W power dissipation, 67.6V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, adhering to AEC-Q101 and IEC-61000-4-5 standards. Operates b/w -55°C to 150°C with a max clamping voltage of 95V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,234 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 300 parts In-Stock

1+ parts

$0.080

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300

$0.080

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Ampacity Inc.

Singapore . 618 parts In-Stock

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$3.010

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618

$3.010

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AZTECH Wire

Italy . 756 parts In-Stock

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$16.686

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756

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Argo Parts USA

USA . 2,473 parts In-Stock

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Continental Prestige Electronics

USA . 2,156 parts In-Stock

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Bastille Electronics

Australia . 27 parts In-Stock

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Overview

Looking for a reliable solution to protect your electronic devices from voltage spikes? Look no further than the Vishay Intertechnology SMF58A-HM3-18 Transient Suppression Device. With its high-quality construction and advanced technology, this diode offers unparalleled protection for your equipment. Whether you are in the automotive industry or telecommunications sector, this product provides peace of mind knowing that your devices are safeguarded against damaging voltage surges. Trust Vishay Intertechnology to deliver exceptional performance and reliability with the SMF58A-HM3-18.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and protection for the device, ensuring reliability and durability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

Capable of handling high power surges, making it suitable for applications where transient voltage protection is crucial.

Nominal Breakdown Voltage: 67.6 V

Provides effective protection by triggering at a voltage level that prevents damage to connected devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, ideal for various operating environments.

Reference Standard: AEC-Q101; IEC-61000-4-5

Complies with industry standards, ensuring high quality and reliability for use in diverse applications.

Technical Specifications

Transient Suppression Devices SMF58A-HM3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

Maximum Breakdown Voltage:

70.8 V

Minimum Breakdown Voltage:

64.4 V

Nominal Breakdown Voltage:

67.6 V

Maximum Clamping Voltage:

95 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.5 V

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

58 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

58 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF58A-HM3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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