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SMF40A-HE3-08

Vishay Intertechnology

SMF40A-HE3-08 by Vishay Intertechnology

Vishay Intertechnology's SMF40A-HE3-08 is a unidirectional avalanche diode with 1000W peak power dissipation, 46.75V breakdown voltage, and 0.1uA reverse current. Ideal for transient suppression in automotive electronics, industrial equipment, and consumer electronics due to its compact small outline package and high clamping voltage of 64.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,159 parts In-Stock

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4,159

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 329 parts In-Stock

1+ parts

$2.010

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329

$2.010

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AZTECH Wire

Italy . 580 parts In-Stock

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$15.675

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580

$15.675

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Kepictronics

USA . 125,600 parts In-Stock

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125,600

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Metaverse IC Inc.

Canada . 125,600 parts In-Stock

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125,600

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Continental Prestige Electronics

USA . 1,694 parts In-Stock

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1,694

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Argo Parts USA

USA . 1,565 parts In-Stock

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1,565

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Protect your electronics with the SMF40A-HE3-08 by Vishay Intertechnology. These transient suppression devices offer unmatched quality and reliability, making them a top choice for a wide range of applications. With a maximum non-repetitive peak reverse power dissipation of 1000W and a nominal breakdown voltage of 46.75V, this product ensures optimal performance and protection. Trust Vishay Intertechnology to deliver superior products that provide value, benefits, and advantages to customers in need of high-quality transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this device lightweight, durable, and resistant to environmental factors, making it ideal for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

With a high maximum non-repetitive peak reverse power dissipation of 1000W, this device can effectively handle sudden spikes or surges in voltage, providing reliable protection for the connected circuit.

Nominal Breakdown Voltage: 46.75 V

The nominal breakdown voltage of 46.75V ensures that the device activates at the specified voltage level, offering precise protection against overvoltage conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this device can function effectively in high-temperature environments without compromising its performance, making it suitable for a wide range of applications.

Reference Standard: AEC-Q101; IEC-61000-4-5

Compliance with standards such as AEC-Q101 and IEC-61000-4-5 ensures that this device meets industry requirements for transient suppression devices, guaranteeing reliability and performance.

Technical Specifications

Transient Suppression Devices SMF40A-HE3-08 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

Maximum Breakdown Voltage:

49.1 V

Minimum Breakdown Voltage:

44.4 V

Nominal Breakdown Voltage:

46.75 V

Maximum Clamping Voltage:

64.5 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.5 V

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF40A-HE3-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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