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SMF30A-M3-18

Vishay Intertechnology

SMF30A-M3-18 by Vishay Intertechnology

Vishay Intertechnology's SMF30A-M3-18 is a unidirectional avalanche diode with 1000W peak power dissipation, 35.1V breakdown voltage, and 48.4V clamping voltage. Ideal for transient suppression in electronics to protect against voltage spikes during operation. Package style: small outline, surface mountable with matte tin terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 15,720 parts In-Stock

1+ parts

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15,720

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,164 parts In-Stock

1+ parts

$0.010

100+ parts

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1k+ parts

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1,164

$0.010

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AZTECH Wire

Italy . 554 parts In-Stock

1+ parts

$9.552

100+ parts

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1k+ parts

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10k+ parts

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554

$9.552

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100

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Overview

Discover the Vishay Intertechnology SMF30A-M3-18, a top-quality transient suppression device that offers unparalleled protection and reliability for your electronic devices. As a leading manufacturer in the industry, Vishay Intertechnology ensures superior performance and durability in every product they produce. Ideal for various applications, this single-config, surface-mount device boasts a nominal breakdown voltage of 35.1V and a maximum clamping voltage of 48.4V, providing peace of mind against power surges and other electrical disturbances. Trust Vishay Intertechnology to safeguard your equipment and enjoy uninterrupted operation with the SMF30A-M3-18.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection and durability for the device, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the design and installation of the transient suppression device, making it easy to use.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into electronic circuits, saving space and improving overall system design.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High maximum power dissipation ensures effective protection against transient events and overvoltages, safeguarding the connected components.

Nominal Breakdown Voltage: 35.1 V

The nominal breakdown voltage of 35.1 V ensures reliable transient suppression performance within specified limits, protecting sensitive electronics.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current ensures minimal leakage and standby power consumption, enhancing overall efficiency of the device.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy handling, storage, and placement of the device, improving user convenience.

Reverse Test Voltage: 30 V

Reverse test voltage of 30 V indicates the maximum voltage the device can withstand in reverse bias mode, ensuring robust protection against voltage spikes.

No. of Terminals: 2

Having only 2 terminals simplifies the connections and installation process, reducing the chances of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes the device compact and lightweight, suitable for space-constrained applications where size matters.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows the device to withstand harsh environmental conditions and maintain stable performance.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C ensures the device can operate reliably in extreme cold conditions, providing consistent protection.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections for long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and orientation of the device, accommodating different installation requirements.

Minimum Breakdown Voltage: 33.3 V

Having a minimum breakdown voltage of 33.3 V ensures consistent protection levels at lower voltage thresholds, safeguarding electronics effectively.

Maximum Time At Peak Reflow Temperature (s): 30

Limited time at peak reflow temperature of 30 seconds prevents thermal damage during soldering or rework processes, maintaining product integrity.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C enables reliable soldering of the device onto PCBs, ensuring strong mechanical and electrical connections.

Maximum Breakdown Voltage: 36.9 V

Higher maximum breakdown voltage of 36.9 V provides additional protection margin against transient events and voltage surges, enhancing reliability.

Reference Standard: IEC-61000-4-5

Compliance with IEC standard 61000-4-5 ensures the device meets industry requirements for transient suppression performance, ensuring reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The TransVoltage Suppressor diode type is specifically designed for transient suppression applications, offering effective protection against voltage spikes.

Maximum Forward Voltage (VF): 2.5 V

Low maximum forward voltage of 2.5 V helps minimize voltage drops across the device during normal operation, preserving signal integrity.

Technology: AVALANCHE

Avalanche technology allows the device to handle high energy transients by triggering an avalanche breakdown, improving the overall transient suppression capability.

Terminal Form: FLAT

Flat terminal form facilitates easy soldering and connection of the device onto PCBs, ensuring secure attachment and stable electrical contacts.

Maximum Repetitive Peak Reverse Voltage: 30 V

Having a maximum repetitive peak reverse voltage of 30 V indicates the device's ability to withstand multiple transient events without degradation.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device suppresses voltage spikes in one direction only, suitable for applications with specific signal requirements.

Maximum Clamping Voltage: 48.4 V

Clamping voltage of 48.4 V limits the voltage spikes across the device, protecting downstream electronics from excessive voltages during transient events.

Diode Element Material: SILICON

Silicon diode element material provides reliable and efficient transient suppression performance, making it a common choice for various applications.

Technical Specifications

Transient Suppression Devices SMF30A-M3-18 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW NOISE

Maximum Breakdown Voltage:

36.9 V

Minimum Breakdown Voltage:

33.3 V

Nominal Breakdown Voltage:

35.1 V

Maximum Clamping Voltage:

48.4 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

2.5 V

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMF30A-M3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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