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UCC2752N

Texas Instruments

UCC2752N by Texas Instruments

UCC2752N by Texas Instruments is a BICMOS technology telecom IC with 16 terminals, operating at -40 to 85°C. It has a nominal voltage of 12V and max supply current of 0.003mA. This rectangular package is ideal for telecom circuit applications requiring low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,391 parts In-Stock

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Digiode

USA . 2,910 parts In-Stock

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2,910

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Distributors (Availability)

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AZTECH Wire

Italy . 215 parts In-Stock

1+ parts

$6.098

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215

$6.098

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Parana Technologies

USA . 1,077 parts In-Stock

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$15.718

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$16.083

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1,077

$15.718

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$16.083

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DigiPath Technology Company

USA . 1,405 parts In-Stock

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$17.308

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$15.923

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1,405

$17.308

$15.923

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ChromeModa Solutions

Germany . 4,471 parts In-Stock

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$17.661

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$14.482

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4,471

$17.661

$14.482

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IDEA Electronic Components Group

UK . 784 parts In-Stock

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$17.661

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$16.778

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$15.895

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784

$17.661

$16.778

$15.895

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One Stop Electronics

USA . 480 parts In-Stock

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$995.000

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480

$995.000

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Corphita

USA . 1,568 parts In-Stock

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Overview

Discover the cutting-edge UCC2752N by Texas Instruments, a top-tier player in the semiconductor industry. This exceptional telecom interface IC offers unmatched quality and reliability, making it ideal for a wide range of applications. From telecommunications to industrial equipment, this versatile product delivers superior performance and efficiency. Trust in Texas Instruments to provide you with the best-in-class solutions that will elevate your projects to new heights. Experience the value and benefits that the UCC2752N brings to the table and unlock endless possibilities for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the IC, ensuring a longer lifespan.

Power Supplies (V): 12

Operating at 12V allows for compatibility with a wide range of systems, making it versatile.

No. of Terminals: 16

Having 16 terminals allows for a variety of connections and functionalities, increasing flexibility.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can work efficiently even in demanding conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the IC can function reliably in cold environments.

Technology: BICMOS

Utilizing BiCMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and stable connections, reducing the risk of signal loss or disruptions.

Nominal Supply Voltage: 12 V

Having a nominal supply voltage of 12V simplifies compatibility and integration with various systems.

Technical Specifications

Other Function Telecom Interface ICs UCC2752N attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

Length:

19.31 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Telephone Circuits

Maximum Supply Current:

.003 mA

Nominal Supply Voltage:

12 V

Surface Mount:

NO

Technology:

BICMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

UCC2752N Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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