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UCC2751N

Texas Instruments

UCC2751N by Texas Instruments

UCC2751N by Texas Instruments is a BICMOS technology telecom IC with 16 terminals, operating at -40 to 85°C. It has a 12V supply voltage and comes in an IN-LINE package style. Ideal for telecom circuits, it offers dual terminal position and TIN LEAD finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,296 parts In-Stock

1+ parts

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7,296

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Digiode

USA . 1,428 parts In-Stock

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1,428

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 715 parts In-Stock

1+ parts

$11.053

100+ parts

-

1k+ parts

$11.514

10k+ parts

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715

$11.053

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$11.514

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DigiPath Technology Company

USA . 1,200 parts In-Stock

1+ parts

$12.171

100+ parts

$11.197

1k+ parts

-

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1,200

$12.171

$11.197

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AZTECH Wire

Italy . 318 parts In-Stock

1+ parts

$12.368

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318

$12.368

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ChromeModa Solutions

Germany . 2,655 parts In-Stock

1+ parts

$12.419

100+ parts

$10.184

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2,655

$12.419

$10.184

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IDEA Electronic Components Group

UK . 1,520 parts In-Stock

1+ parts

$12.419

100+ parts

$11.798

1k+ parts

$11.177

10k+ parts

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1,520

$12.419

$11.798

$11.177

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One Stop Electronics

USA . 813 parts In-Stock

1+ parts

$447.000

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813

$447.000

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Corphita

USA . 2,194 parts In-Stock

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2,194

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Overview

Unleash the power of innovation with the UCC2751N by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge solutions for telecom interface ICs like no other. The UCC2751N offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. From its industrial-grade temperature tolerance to its convenient package style, this product is designed to exceed expectations. Elevate your projects with the UCC2751N and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances the durability and longevity of the IC, making it resistant to environmental factors and mechanical stress.

Power Supplies (V): 12

Operating at 12V ensures compatibility with a wide range of systems and applications, providing a reliable power source for the IC to function efficiently.

No. of Terminals: 16

Having 16 terminals allows for versatile connectivity options, enabling the IC to interface with multiple external devices or components for enhanced functionality.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this IC can withstand extended periods of use without overheating, ensuring reliable performance in demanding environments.

Technology: BICMOS

Utilizing Bipolar-CMOS (BICMOS) technology combines the advantages of both bipolar and CMOS technologies, offering high-speed performance and low power consumption for efficient operation.

Technical Specifications

Other Function Telecom Interface ICs UCC2751N attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e0

Length:

19.31 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Telephone Circuits

Nominal Supply Voltage:

12 V

Surface Mount:

NO

Technology:

BICMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

UCC2751N Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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