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UC1914J

Texas Instruments

UC1914J by Texas Instruments

UC1914J by Texas Instruments is a Power Management IC with 18 terminals, operating b/w -55 to 125 °C. It supports supply voltages from 5V to 35V and has a max current of 20mA. Ideal for military-grade applications requiring bipolar technology in an in-line package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,661 parts In-Stock

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5,661

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Digiode

USA . 2,535 parts In-Stock

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2,535

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Distributors (Availability)

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Semicontronic

India . 657 parts In-Stock

1+ parts

$1.500

100+ parts

$1.462

1k+ parts

$1.455

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657

$1.500

$1.462

$1.455

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Ampacity Inc.

Singapore . 1,325 parts In-Stock

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$5.500

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1,325

$5.500

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One Stop Electronics

USA . 504 parts In-Stock

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$5.500

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504

$5.500

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AZTECH Wire

Italy . 598 parts In-Stock

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$6.993

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598

$6.993

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Parana Technologies

USA . 1,977 parts In-Stock

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$8.668

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$9.346

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1,977

$8.668

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$9.346

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DigiPath Technology Company

USA . 150 parts In-Stock

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$9.544

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150

$9.544

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IDEA Electronic Components Group

UK . 2,260 parts In-Stock

1+ parts

$9.739

100+ parts

$9.252

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$8.765

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2,260

$9.739

$9.252

$8.765

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ChromeModa Solutions

Germany . 2,096 parts In-Stock

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$9.739

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$7.986

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2,096

$9.739

$7.986

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Corphita

USA . 1,777 parts In-Stock

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1,777

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Corohmni

South Africa . 227 parts In-Stock

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Overview

Elevate your power management capabilities with the UC1914J by Texas Instruments. This high-quality Power Management IC boasts a MILITARY-grade temperature grade, ensuring reliability in even the most demanding environments. With a wide supply voltage range of 5V to 35V and 18 terminals for versatile applications, this IC offers exceptional value and performance. From industrial machinery to aerospace systems, the UC1914J delivers efficiency and precision, making it the ideal choice for your power management needs. Elevate your projects with Texas Instruments UC1914J today.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed package body materials provide excellent durability and reliability for this Power Management IC, ensuring long-lasting performance under various operating conditions.

Nominal Supply Voltage (Vsup): 12 V

The 12V nominal supply voltage makes this Power Management IC suitable for a wide range of applications requiring a stable power source at this voltage level.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this Power Management IC can withstand elevated temperatures without compromising its functionality, making it ideal for demanding environments.

Technology: BIPOLAR

The bipolar technology used in this Power Management IC ensures efficient power management and accurate control, offering reliable performance for various applications.

Technical Specifications

Power Management ICs UC1914J attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-GDIP-T18

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

18

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/35

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

20 mA

Maximum Supply Voltage (Vsup):

35 V

Minimum Supply Voltage (Vsup):

5 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

UC1914J Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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