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UC1907J883B

Texas Instruments

UC1907J883B by Texas Instruments

UC1907J883B by Texas Instruments is a MIL-STD-883 Class B Power Management IC with 16 terminals, operating b/w -55 to 125 °C. It supports power supply circuits with Vsup ranging from 4.5V to 35V and features adjustable threshold levels for military-grade applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,831 parts In-Stock

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Vyrian

USA . 2,877 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 649 parts In-Stock

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$4.500

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649

$4.500

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Semicontronic

India . 313 parts In-Stock

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$4.500

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$4.388

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$4.365

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313

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One Stop Electronics

USA . 277 parts In-Stock

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$7.500

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277

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Parana Technologies

USA . 1,297 parts In-Stock

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$7.738

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$8.272

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$7.738

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$8.272

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DigiPath Technology Company

USA . 1,523 parts In-Stock

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$8.520

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$7.839

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$8.520

$7.839

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ChromeModa Solutions

Germany . 2,534 parts In-Stock

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$8.694

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$7.129

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$7.129

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IDEA Electronic Components Group

UK . 1,986 parts In-Stock

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$8.694

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$8.259

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$7.825

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AZTECH Wire

Italy . 648 parts In-Stock

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$15.362

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648

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Corphita

USA . 4,929 parts In-Stock

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Corohmni

South Africa . 443 parts In-Stock

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Overview

Enhance your power management capabilities with the UC1907J883B by Texas Instruments. Crafted with precision and reliability, this MIL-STD-883 Class B screened Power Management IC offers unparalleled quality and performance. Ideal for military-grade applications, this ceramic, glass-sealed gem provides a wide operating temperature range of -55 to 125°C. With its adjustable threshold and versatile terminal options, this IC is the perfect solution for your power supply support circuit needs. Upgrade to the UC1907J883B today and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components, ensuring reliable performance in various environmental conditions.

Screening Level: MIL-STD-883 Class B

This high screening level ensures that the product meets stringent quality standards and performs consistently in demanding applications.

Nominal Supply Voltage (Vsup): 15 V

The 15V supply voltage provides a stable power source for the device, allowing it to operate efficiently and effectively.

No. of Terminals: 16

Having 16 terminals offers flexibility in connectivity options, allowing for versatile integration into various systems and configurations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the device can withstand elevated temperatures without compromising performance or reliability.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the device to function in extremely cold environments, making it suitable for a wide range of applications.

Adjustable Threshold: YES

The adjustable threshold feature allows for customization and fine-tuning of the device's parameters, enabling precise control and optimization in different operating conditions.

Technical Specifications

Power Management ICs UC1907J883B attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-GDIP-T16

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

35 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

15 V

Surface Mount:

NO

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

UC1907J883B Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-484-8762, 5962014848762

NIIN

014848762

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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