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TNETE2201BPJDRG4

Texas Instruments

TNETE2201BPJDRG4 by Texas Instruments

TNETE2201BPJDRG4 by Texas Instruments is an Ethernet transceiver with 1250 Mbps data rate, operating at 3.3V. It features a quad-terminal position, Gull Wing terminal form, and CMOS technology. Ideal for network interfaces in commercial-grade applications due to its compact square package design and low supply current of 0.26 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,043 parts In-Stock

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Digiode

USA . 504 parts In-Stock

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504

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Parana Technologies

USA . 907 parts In-Stock

1+ parts

$9.983

100+ parts

$927.085

1k+ parts

$8.985

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907

$9.983

$927.085

$8.985

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AZTECH Wire

Italy . 763 parts In-Stock

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$10.890

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DigiPath Technology Company

USA . 801 parts In-Stock

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$10.993

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$10.113

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801

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ChromeModa Solutions

Germany . 5,178 parts In-Stock

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$11.217

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$9.198

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$9.198

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IDEA Electronic Components Group

UK . 1,380 parts In-Stock

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$11.217

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$10.656

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$10.095

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1,380

$11.217

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$10.095

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Semicontronic

India . 298 parts In-Stock

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$624.000

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$608.400

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$605.280

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298

$624.000

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$605.280

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One Stop Electronics

USA . 677 parts In-Stock

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$765.000

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Ampacity Inc.

Singapore . 1,468 parts In-Stock

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$943.000

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Microchip USA

USA . 5,476 parts In-Stock

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Corphita

USA . 4,851 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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Overview

Upgrade your network with the TNETE2201BPJDRG4 from Texas Instruments, a leading manufacturer known for quality and innovation. This Ethernet transceiver offers high-speed data transfer of up to 1250 Mbps, making it ideal for a wide range of applications. With a package style that includes thin profile and fine pitch features, this product is designed for optimal performance and efficiency. Trust in Texas Instruments to deliver reliable solutions that enhance connectivity and streamline operations. Experience the value and benefits of cutting-edge technology with the TNETE2201BPJDRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ensuring long-lasting performance.

Surface Mount: YES

Being surface mountable makes the product easy to install and reduces the need for additional components, simplifying the overall design.

Power Supplies (V): 3.3

Operating at a voltage of 3.3V makes the product suitable for various applications while maintaining energy efficiency.

No. of Terminals: 64

Having 64 terminals allows for efficient connectivity and communication within the network, enhancing the overall functionality of the product.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures the product can withstand heat and operate reliably under different environmental conditions.

Technology: CMOS

The use of CMOS technology enables efficient power consumption and high-speed performance, making the product ideal for network interfaces.

Data Rate: 1250 Mbps

With a data rate of 1250 Mbps, the product offers fast and reliable data transfer speeds, enhancing the overall network performance.

Technical Specifications

Network Interfaces TNETE2201BPJDRG4 attributes and parameters. Explore more Network Interfaces devices from Texas Instruments

Specs

Data Rate:

1250 Mbps

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e4

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

64

No. of Transceivers:

1

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TQFP64,.47SQ

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Network Interfaces

Maximum Supply Current:

.26 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Trade Compliance

TNETE2201BPJDRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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