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TMX320DM6467ZUT

Texas Instruments

TMX320DM6467ZUT by Texas Instruments

Texas Instruments TMX320DM6467ZUT is a 32-bit microprocessor with 32768 RAM words. It operates b/w 0-85°C, with supply voltages of 1.14-3.3V. Ideal for applications requiring MICROPROCESSOR CIRCUIT technology in a SQUARE package style with 529 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,403 parts In-Stock

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Digiode

USA . 1,206 parts In-Stock

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PC Components Company LLC

USA . 304 parts In-Stock

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Bristol Electronics

USA . 304 parts In-Stock

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AZTECH Wire

Italy . 586 parts In-Stock

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$14.917

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One Stop Electronics

USA . 1,497 parts In-Stock

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$27.000

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Parana Technologies

USA . 222 parts In-Stock

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$41.687

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DigiPath Technology Company

USA . 463 parts In-Stock

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$45.902

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463

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ChromeModa Solutions

Germany . 4,246 parts In-Stock

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$46.839

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$38.408

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IDEA Electronic Components Group

UK . 1,643 parts In-Stock

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$46.839

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$44.497

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$42.155

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Corohmni

South Africa . 879 parts In-Stock

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$59.665

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Corphita

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Overview

Discover the cutting-edge technology of the TMX320DM6467ZUT by Texas Instruments, a high-quality microprocessor circuit offering unmatched performance and reliability. With a wide range of applications in various industries, this product boasts advanced features and innovative design. Elevate your projects with this versatile IC, designed to meet the demands of modern technology. Trust in Texas Instruments' reputation for excellence and unlock the incredible value and benefits that the TMX320DM6467ZUT brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IC, ensuring reliability and durability.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 1.26 V

Suitable for low-power applications, helping to conserve energy and extend battery life.

Package Shape: SQUARE

Facilitates uniform and compact design integration within electronic devices.

Bit Size: 32

Offers a balance between processing power and efficiency, suitable for a wide range of tasks.

Power Supplies (V): 1.2,1.8,3.3

Provides flexibility in voltage options, enabling compatibility with different power sources.

No. of Terminals: 529

Allows for connectivity to various external components and peripherals, enhancing functionality and versatility.

Package Style (Meter): GRID ARRAY, HEAT SINK/SLUG, FINE PITCH

Offers multiple packaging options for different requirements, allowing for optimal heat dissipation and signal routing.

Minimum Supply Voltage: 1.14 V

Maintains stable operation even at low voltage levels, ensuring consistent performance under varying conditions.

Maximum Operating Temperature: 85 °C

Supports operation in a wide range of environmental conditions, making it suitable for diverse applications.

Minimum Operating Temperature: 0 °C

Can function reliably in cold environments, expanding its usability in various settings.

Terminal Position: BOTTOM

Facilitates easier and more secure connection to the circuit board, enhancing overall reliability.

Maximum Seated Height: 3.1 mm

Enables compact and low-profile designs, ideal for space-constrained applications.

RAM Words: 32768

Provides sufficient memory capacity for storing and processing data efficiently.

Width: 19 mm

Compact size allows for easy integration into various electronic devices without occupying much space.

Length: 19 mm

Compact dimensions contribute to space-saving designs and ease of installation.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporates advanced processing capabilities, suitable for handling complex tasks and computations.

Technology: CMOS

Offers low power consumption and high noise immunity, enhancing overall efficiency and reliability.

Terminal Form: BALL

Provides reliable and secure connections, ensuring stable performance in demanding applications.

Nominal Supply Voltage: 1.2 V

Standard voltage level for compatibility with a wide range of power sources and peripherals.

Terminal Pitch: 0.8 mm

Allows for precise and efficient signal routing, enhancing overall performance and reliability.

Format: FIXED POINT

Suitable for applications that require precise and consistent numerical calculations.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs TMX320DM6467ZUT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Additional Features:

DSP, C64X-594 MHZ, 32-BIT, 4752 MIPS; ARM926EJ-S, 297 MHZ, 32-BIT; ALSO REQUIRES 3.3V I/O SUPPLY

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B529

Length:

19 mm

No. of Terminals:

529

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY, HEAT SINK/SLUG, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

32768

Maximum Seated Height:

3.1 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TMX320DM6467ZUT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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