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TIFPLA840MJT

Texas Instruments

TIFPLA840MJT by Texas Instruments

TIFPLA840MJT by Texas Instruments is a TTL technology PLD with 30 ns propagation delay and 5.5 V max supply voltage. Ideal for military applications, it features 14 dedicated inputs, 6 outputs, and operates in temperatures ranging from -55 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,843 parts In-Stock

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Digiode

USA . 571 parts In-Stock

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571

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Distributors (Availability)

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AZTECH Wire

Italy . 615 parts In-Stock

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$8.230

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615

$8.230

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One Stop Electronics

USA . 240 parts In-Stock

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$18.000

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240

$18.000

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Parana Technologies

USA . 548 parts In-Stock

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$81.760

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DigiPath Technology Company

USA . 1,439 parts In-Stock

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$90.028

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$82.825

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1,439

$90.028

$82.825

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ChromeModa Solutions

Germany . 4,525 parts In-Stock

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$91.865

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$75.329

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4,525

$91.865

$75.329

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IDEA Electronic Components Group

UK . 700 parts In-Stock

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$91.865

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$87.272

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$82.678

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700

$91.865

$87.272

$82.678

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Corphita

USA . 4,545 parts In-Stock

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Overview

Unlock the power of programmable logic with the TIFPLA840MJT by Texas Instruments. Manufactured with precision and expertise, this PLA-type programmable logic device offers lightning-fast propagation delay and a wide range of applications in various industries. With features such as combinatorial output functions and 32 product terms, this device provides immense value and flexibility to customers seeking high-quality solutions for their projects. Elevate your designs with Texas Instruments' cutting-edge technology and experience the advantages of reliable performance and efficiency in every application.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material ensures durability and reliability of the product, making it suitable for harsh operating conditions.

Propagation Delay: 30 ns

Low propagation delay ensures fast response time, which is crucial for high-speed applications.

Maximum Supply Voltage: 5.5 V

Can handle a higher supply voltage, offering flexibility in power supply options.

Technology Used: TTL

Utilizing TTL technology ensures compatibility with existing TTL-based systems, making integration easier.

No. of Inputs: 14

Having a higher number of inputs allows for more complex logic functions to be implemented.

Architecture: PLA-TYPE

PLA architecture allows for flexible programming of logic functions, enhancing versatility.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme low temperatures, making it suitable for a wide range of environments.

No. of Outputs: 6

Having multiple outputs allows for driving multiple devices simultaneously, increasing functionality.

Technical Specifications

Programmable Logic Devices (PLD) TIFPLA840MJT attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

Organization:

14 Dedicated Inputs, 0 I/O

No. of Outputs:

6

Output Function:

Combinatorial

No. of Inputs:

14

No. of Product Terms:

32

No. of Dedicated Inputs:

14

No. of I/O Lines:

0

Propagation Delay:

30 ns

Technology:

TTL

Architecture:

PLA-TYPE

Sub-Category:

Programmable Logic Devices

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage:

5.5 V

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

125 °C (257 °F)

Minimum Operating Temperature:

-55 °C (-67 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic, Glass-Sealed

Package Style (Meter):

In-Line

Package Code:

DIP

Package Shape:

Package Equivalence Code:

DIP24,.3

Terminal Characteristcs

Terminal Position:

Dual

Terminal Form:

No. of Terminals:

24

Terminal Pitch:

2.54 mm

Standards

JESD-30 Code:

R-GDIP-T24

Qualified:

No

Trade Compliance

TIFPLA840MJT Programmable ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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