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TGS8705-SCC

Texas Instruments

TGS8705-SCC by Texas Instruments

TGS8705-SCC by Texas Instruments is a GAAS SPDT RF switch with 30 dBm CW power, 1.2 VSWR, and 1.1 dB insertion loss. Operating from 0-6000 MHz, it's ideal for reflective port termination applications in RF/Microwave systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,343 parts In-Stock

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Digiode

USA . 1,396 parts In-Stock

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One Stop Electronics

USA . 981 parts In-Stock

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$1.000

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981

$1.000

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Parana Technologies

USA . 2,227 parts In-Stock

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$1.315

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$2.058

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IDEA Electronic Components Group

UK . 1,620 parts In-Stock

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$1.478

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$1.330

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$1.478

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ChromeModa Solutions

Germany . 1,547 parts In-Stock

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$1.478

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$1.212

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AZTECH Wire

Italy . 801 parts In-Stock

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$19.207

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Semicontronic

India . 807 parts In-Stock

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$33.000

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$32.175

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$32.010

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807

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Ampacity Inc.

Singapore . 1,444 parts In-Stock

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$40.000

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DigiPath Technology Company

USA . 1,331 parts In-Stock

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$1.333

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Corphita

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Corohmni

South Africa . 470 parts In-Stock

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Overview

Unlock seamless connectivity with the TGS8705-SCC RF/Microwave Switch by Texas Instruments. Experience top-notch quality and reliability from a renowned manufacturer, allowing for maximum input power and minimal insertion loss. Whether you're in telecommunications, aerospace, or defense, this SPDT switch offers unparalleled performance and versatility. Elevate your applications with the advanced technology of GAAS and enjoy the benefits of enhanced signal control and precision. Upgrade your systems today with the TGS8705-SCC and revolutionize your connectivity experience.

Feature Benefit Bullets

Maximum Input Power (CW) 30 dBm

High maximum input power allows for reliable operation at high power levels, making it suitable for various applications where strong signals are present.

Maximum Voltage Standing Wave Ratio 1.2

Low VSWR ensures efficient power transfer and minimal signal reflection, resulting in better overall performance and signal integrity.

Maximum Insertion Loss 1.1 dB

Low insertion loss means minimal signal attenuation when the switch is in the 'ON' state, ensuring minimal signal degradation and better overall system performance.

Technology GAAS

Gallium Arsenide (GaAs) technology offers high linearity, low noise, and high reliability, making it ideal for RF/microwave applications requiring precision and stable performance.

RF or Microwave Device Type SPDT

Single-Pole Double-Throw (SPDT) configuration provides flexibility in signal routing and switching, allowing for versatile system design and functionality.

Minimum Operating Frequency 0 MHz

Wide frequency range starting from 0 MHz makes this switch suitable for a variety of applications, including those requiring operation at DC or low frequencies.

Maximum Operating Frequency 6000 MHz

High maximum operating frequency of 6000 MHz enables use in high-frequency RF/microwave systems, making it suitable for a wide range of applications.

Port Termination REFLECTIVE

Reflective port termination allows for signal reflection back to the source, enabling impedance matching and better signal integrity in the system.

Technical Specifications

RF/Microwave Switches TGS8705-SCC attributes and parameters. Explore more RF/Microwave Switches devices from Texas Instruments

Specs

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

1.1 dB

No. of Functions:

1

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Package Equivalence Code:

DIE OR CHIP

Port Termination:

REFLECTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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