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SN74V3670-6PEU

Texas Instruments

SN74V3670-6PEU by Texas Instruments

SN74V3670-6PEU by Texas Instruments is a FIFO memory with 8Kx36 organization, operating at 166 MHz with a cycle time of 6 ns. It features synchronous operation, parallel interface, and output enable functionality. Ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,031 parts In-Stock

1+ parts

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8,031

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Digiode

USA . 3,749 parts In-Stock

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3,749

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 206 parts In-Stock

1+ parts

$3.764

100+ parts

-

1k+ parts

$4.259

10k+ parts

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206

$3.764

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$4.259

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One Stop Electronics

USA . 1,313 parts In-Stock

1+ parts

$4.000

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-

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1,313

$4.000

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DigiPath Technology Company

USA . 2,219 parts In-Stock

1+ parts

$4.144

100+ parts

$3.813

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2,219

$4.144

$3.813

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ChromeModa Solutions

Germany . 2,798 parts In-Stock

1+ parts

$4.229

100+ parts

$3.468

1k+ parts

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2,798

$4.229

$3.468

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IDEA Electronic Components Group

UK . 1,092 parts In-Stock

1+ parts

$4.229

100+ parts

-

1k+ parts

$3.806

10k+ parts

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1,092

$4.229

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$3.806

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Advanced Electronics

New Zealand . 27 parts In-Stock

1+ parts

$5.250

100+ parts

$4.778

1k+ parts

$4.305

10k+ parts

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27

$5.250

$4.778

$4.305

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AZTECH Wire

Italy . 494 parts In-Stock

1+ parts

$8.999

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494

$8.999

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Microchip USA

USA . 4,595 parts In-Stock

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4,595

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Corphita

USA . 4,505 parts In-Stock

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4,505

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Overview

Experience seamless data handling with the Texas Instruments SN74V3670-6PEU FIFO memory IC. Built with precision and reliability in mind, this high-quality product offers efficient storage and retrieval of data in a variety of applications. With a compact design and advanced technology, this FIFO memory device ensures fast operation and optimal performance. Trust Texas Instruments for top-tier products that deliver value and unmatched benefits to customers across the globe. Elevate your data management solutions with the SN74V3670-6PEU today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the components inside the FIFO, ensuring a longer lifespan.

Cycle Time: 6 ns

Fast cycle time of 6 ns allows for quick data retrieval and transfer, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard supply voltage of 3.3V, making it compatible with a wide range of systems and devices.

No. of Terminals: 128

With 128 terminals, this FIFO can handle multiple inputs and outputs efficiently, increasing data processing capabilities.

Maximum Clock Frequency (fCLK): 166 MHz

High maximum clock frequency of 166 MHz allows for rapid data transfer and processing, suitable for demanding applications.

Memory Width: 36

With a memory width of 36 bits, this FIFO can handle large amounts of data at once, enhancing overall performance.

Output Enable: YES

The output enable feature allows for control over when data is output from the FIFO, adding flexibility and efficiency to data transfer processes.

Technical Specifications

FIFO SN74V3670-6PEU attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

4.5 ns

Maximum Clock Frequency (fCLK):

166 MHz

Cycle Time:

6 ns

JESD-30 Code:

R-PQFP-G128

JESD-609 Code:

e4

Length:

20 mm

Memory Density:

294912 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

128

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX36

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP128,.63X.87,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

SN74V3670-6PEU Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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