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SN74V293-10GGM

Texas Instruments

SN74V293-10GGM by Texas Instruments

SN74V293-10GGM by Texas Instruments is a FIFO with 64KX18 organization, 100 terminals, and 10 ns cycle time. It operates synchronously at up to 100 MHz clock frequency and is suitable for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,512 parts In-Stock

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4,512

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Digiode

USA . 398 parts In-Stock

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398

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One Stop Electronics

USA . 137 parts In-Stock

1+ parts

$1.000

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137

$1.000

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Parana Technologies

USA . 557 parts In-Stock

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$1.991

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$2.520

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557

$1.991

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$2.520

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DigiPath Technology Company

USA . 440 parts In-Stock

1+ parts

$2.192

100+ parts

$2.017

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440

$2.192

$2.017

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IDEA Electronic Components Group

UK . 1,788 parts In-Stock

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$2.237

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$2.013

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1,788

$2.237

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$2.013

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ChromeModa Solutions

Germany . 853 parts In-Stock

1+ parts

$2.237

100+ parts

$1.834

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853

$2.237

$1.834

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AZTECH Wire

Italy . 638 parts In-Stock

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$8.496

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638

$8.496

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Corphita

USA . 1,900 parts In-Stock

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Microchip USA

USA . 194 parts In-Stock

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Overview

Elevate your electronic projects with the SN74V293-10GGM by Texas Instruments, a top-of-the-line FIFO memory IC that delivers unparalleled quality and reliability. Designed with cutting-edge CMOS technology, this FIFO chip boasts a lightning-fast cycle time of 10 ns and a maximum clock frequency of 100 MHz, making it ideal for high-speed data storage applications. With a nominal supply voltage of 3.3V and a low profile, fine pitch package style, this versatile component offers exceptional performance in a compact form factor. Trust Texas Instruments to provide innovative solutions for your design needs, and experience the benefits of seamless data management with the SN74V293-10GGM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ideal for a variety of applications.

Cycle Time: 10 ns

The fast cycle time of 10 ns ensures efficient data processing and transfer, making the product suitable for high-speed operations.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures compatibility with a wide range of systems and applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient coordination between different components, resulting in reliable and accurate data transfer.

Maximum Clock Frequency (fCLK): 100 MHz

The high maximum clock frequency of 100 MHz allows for fast data processing and high-speed performance, making the product suitable for demanding tasks.

Memory Density: 1179648 bit

The high memory density of 1179648 bit ensures ample storage capacity for data, making the product suitable for applications requiring large amounts of memory.

Output Enable: YES

The output enable feature allows for efficient control over data output, enabling precise timing and coordination in data transmission.

Technology: CMOS

The CMOS technology used in the product offers low power consumption, high noise immunity, and compatibility with a wide range of systems, making it a reliable and efficient choice.

Technical Specifications

FIFO SN74V293-10GGM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

6.5 ns

Additional Features:

CAN ALSO BE CONFIGURED AS 131072 X 9

Alternate Memory Width:

9

Maximum Clock Frequency (fCLK):

100 MHz

Cycle Time:

10 ns

JESD-30 Code:

S-PBGA-B100

Length:

10 mm

Memory Density:

1179648 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

100

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74V293-10GGM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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