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SN74ACT2235-40FNR

Texas Instruments

SN74ACT2235-40FNR by Texas Instruments

SN74ACT2235-40FNR by Texas Instruments is a FIFO chip with 1Kx9 organization, 40ns cycle time, and 35ns access time. It operates at 5V with output enable feature for parallel applications. Ideal for systems requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,716 parts In-Stock

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7,716

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Digiode

USA . 1,332 parts In-Stock

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1,332

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Distributors (Availability)

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Parana Technologies

USA . 467 parts In-Stock

1+ parts

$3.657

100+ parts

-

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$4.164

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467

$3.657

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$4.164

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DigiPath Technology Company

USA . 1,381 parts In-Stock

1+ parts

$4.027

100+ parts

$3.705

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1,381

$4.027

$3.705

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ChromeModa Solutions

Germany . 5,949 parts In-Stock

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$4.109

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$3.369

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5,949

$4.109

$3.369

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IDEA Electronic Components Group

UK . 2,348 parts In-Stock

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$4.109

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$3.698

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2,348

$4.109

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$3.698

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One Stop Electronics

USA . 879 parts In-Stock

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$11.000

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879

$11.000

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AZTECH Wire

Italy . 871 parts In-Stock

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$19.395

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871

$19.395

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Corphita

USA . 278 parts In-Stock

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Overview

Enhance your electronic projects with the Texas Instruments SN74ACT2235-40FNR FIFO chip carrier. This high-quality device offers seamless asynchronous operation and a fast cycle time of 40 ns, making it ideal for applications requiring quick data transfer. With its 3-STATE output characteristics and 1Kx9 organization, this FIFO chip ensures efficient memory management and optimal performance. Trust Texas Instruments' reputation for reliability and innovation, and unlock the full potential of your designs with the SN74ACT2235-40FNR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and helps in protecting the internal components of the product.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Cycle Time: 40 ns

Fast cycle time ensures quick and efficient data processing.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and parallel data transfers, increasing overall efficiency.

Nominal Supply Voltage / Vsup (V): 5

Nominal supply voltage of 5V ensures compatibility with standard electronic systems.

No. of Terminals: 44

Large number of terminals provide versatility in connecting with other components.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance even in elevated temperature environments.

Organization: 1KX9

1KX9 organization allows for efficient storage and retrieval of data.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signal.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures functionality in colder environments.

Memory Density: 9216 bit

High memory density allows for storing a large amount of data in a compact space.

Output Enable: YES

Output enable feature allows for controlling the output signal as needed.

Technical Specifications

FIFO SN74ACT2235-40FNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

BYPASS-XCVR

Cycle Time:

40 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.585 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.585 mm

Trade Compliance

SN74ACT2235-40FNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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