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SN74ABT7819-10PNR

Texas Instruments

SN74ABT7819-10PNR by Texas Instruments

SN74ABT7819-10PNR by Texas Instruments is a FIFO with 512x18 organization, operating at 5V. It features a cycle time of 10ns and synchronous operation, suitable for applications requiring fast data transfer and memory management in commercial-grade environments. The package style is flatpack with low profile and fine pitch, making it ideal for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,238 parts In-Stock

1+ parts

-

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7,238

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Digiode

USA . 3,415 parts In-Stock

1+ parts

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3,415

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 885 parts In-Stock

1+ parts

$5.182

100+ parts

-

1k+ parts

$5.783

10k+ parts

-

885

$5.182

-

$5.783

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DigiPath Technology Company

USA . 2,246 parts In-Stock

1+ parts

$5.706

100+ parts

-

1k+ parts

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2,246

$5.706

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ChromeModa Solutions

Germany . 2,409 parts In-Stock

1+ parts

$5.822

100+ parts

$4.774

1k+ parts

-

10k+ parts

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2,409

$5.822

$4.774

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IDEA Electronic Components Group

UK . 1,621 parts In-Stock

1+ parts

$5.822

100+ parts

-

1k+ parts

$5.240

10k+ parts

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1,621

$5.822

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$5.240

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One Stop Electronics

USA . 689 parts In-Stock

1+ parts

$16.000

100+ parts

-

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689

$16.000

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AZTECH Wire

Italy . 844 parts In-Stock

1+ parts

$16.992

100+ parts

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844

$16.992

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Corphita

USA . 419 parts In-Stock

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419

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Overview

Discover the cutting-edge technology of the Texas Instruments SN74ABT7819-10PNR, a top-of-the-line FIFO device that offers unmatched quality and reliability. With a cycle time of just 10 ns and a synchronous operating mode, this product is perfect for applications requiring fast and efficient data storage. Its low profile flatpack design and gull wing terminal form make it easy to integrate into any project. Experience the benefits of parallel operation and output enable function, providing seamless performance in commercial-grade environments. Trust in Texas Instruments to deliver superior products that meet your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and ensuring stable connections.

Cycle Time: 10 ns

Provides fast operational speed for efficient data processing.

Nominal Supply Voltage / Vsup (V): 5

Suitable voltage range for stable and reliable operation.

No. of Terminals: 80

Sufficient terminals for connecting to other components and peripherals.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for various environments.

Organization: 512X18

Efficient organization of memory for improved data management and access.

Technology: BICMOS

Utilizes BiCMOS technology for high performance and low power consumption.

Max Supply Voltage (Vsup): 5.5 V

Provides a safe operating range for increased reliability and protection.

Output Enable: YES

Ability to enable/disable output for better control and power management.

Technical Specifications

FIFO SN74ABT7819-10PNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

9 ns

Cycle Time:

10 ns

JESD-30 Code:

S-PQFP-G80

Length:

12 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

12 mm

Trade Compliance

SN74ABT7819-10PNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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