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SN10KHT5575DWR

Texas Instruments

SN10KHT5575DWR by Texas Instruments

SN10KHT5575DWR by Texas Instruments is a voltage level translator with 8 functions, operating b/w 0-75°C. It features a small outline package style, GULL WING terminals, and ECL to TTL translation. Ideal for applications requiring inverted output polarity and standard input characteristics in commercial extended temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,214 parts In-Stock

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3,214

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Digiode

USA . 2,038 parts In-Stock

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2,038

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 226 parts In-Stock

1+ parts

$10.861

100+ parts

-

1k+ parts

$11.339

10k+ parts

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226

$10.861

-

$11.339

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ChromeModa Solutions

Germany . 4,343 parts In-Stock

1+ parts

$12.203

100+ parts

$10.006

1k+ parts

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4,343

$12.203

$10.006

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IDEA Electronic Components Group

UK . 1,619 parts In-Stock

1+ parts

$12.203

100+ parts

$11.593

1k+ parts

$10.983

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1,619

$12.203

$11.593

$10.983

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AZTECH Wire

Italy . 886 parts In-Stock

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$14.133

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886

$14.133

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One Stop Electronics

USA . 1,163 parts In-Stock

1+ parts

$42.500

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1,163

$42.500

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DigiPath Technology Company

USA . 461 parts In-Stock

1+ parts

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100+ parts

$11.002

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461

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$11.002

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Corphita

USA . 443 parts In-Stock

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443

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Overview

Experience seamless voltage level translation with the SN10KHT5575DWR by Texas Instruments. This versatile component, part of the Voltage Level Translators category, offers 8 functions in a compact SMALL OUTLINE package. With Texas Instruments' reputation for quality and innovation, you can trust that this product delivers reliable performance across various applications. Whether you're working on consumer electronics or industrial machinery, this voltage translator ensures efficient signal conversion, making your projects easier and more cost-effective. Upgrade to the SN10KHT5575DWR today and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the voltage level translator, ensuring a longer lifespan.

Surface Mount: YES

The surface mount feature allows for easier and more efficient installation of the voltage level translator onto circuit boards.

No. of Functions: 8

Having 8 functions in one device increases the versatility and compatibility of the voltage level translator for various applications.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature ensures the reliability and stability of the voltage level translator even in demanding environments.

Output Polarity: INVERTED

The inverted output polarity allows for compatibility with different types of digital devices and systems.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V makes this voltage level translator suitable for a wide range of electronic devices and applications.

Technical Specifications

Voltage Level Translators SN10KHT5575DWR attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G24

Length:

15.4 mm

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

8

No. of Terminals:

24

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

LATCH

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

SN10KHT5575DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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