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PAL16R4AMWB

Texas Instruments

PAL16R4AMWB by Texas Instruments

PAL16R4AMWB by Texas Instruments is a TTL technology-based PLD with 30 ns propagation delay and 64 product terms. It features 12 inputs, 8 dedicated inputs, and 8 outputs in a rectangular flatpack package. Ideal for military applications requiring high-speed mixed output functions at temperatures ranging from -55 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,699 parts In-Stock

1+ parts

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5,699

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Digiode

USA . 4,907 parts In-Stock

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-

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-

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4,907

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,331 parts In-Stock

1+ parts

$5.000

100+ parts

-

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1,331

$5.000

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AZTECH Wire

Italy . 616 parts In-Stock

1+ parts

$5.352

100+ parts

-

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616

$5.352

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Parana Technologies

USA . 76 parts In-Stock

1+ parts

$54.319

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-

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76

$54.319

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DigiPath Technology Company

USA . 96 parts In-Stock

1+ parts

$59.812

100+ parts

$55.027

1k+ parts

-

10k+ parts

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96

$59.812

$55.027

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ChromeModa Solutions

Germany . 6,703 parts In-Stock

1+ parts

$61.033

100+ parts

$50.047

1k+ parts

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6,703

$61.033

$50.047

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IDEA Electronic Components Group

UK . 348 parts In-Stock

1+ parts

$61.033

100+ parts

$57.981

1k+ parts

$54.930

10k+ parts

-

348

$61.033

$57.981

$54.930

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Corphita

USA . 4,278 parts In-Stock

1+ parts

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4,278

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Microchip USA

USA . 2,123 parts In-Stock

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2,123

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Overview

Experience top-notch quality and reliability with the PAL16R4AMWB by Texas Instruments, a leading manufacturer in the industry. This programmable logic device offers unparalleled performance and versatility for a wide range of applications in the field of electronics. With fast propagation delay, high supply voltage, and a robust ceramic and glass-sealed package body material, this PLD ensures optimal functionality and durability. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the PAL16R4AMWB and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent durability and protection for the internal components, ensuring long-term reliability.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for harsh operating environments.

Maximum Supply Voltage: 5.5 V

Allows for compatibility with a wide range of power supplies, offering flexibility in design.

No. of Inputs: 12

Provides ample input options for versatile programming and functionality.

Output Function: MIXED

Offers a combination of different output types, enhancing the versatility and utility of the device.

Technical Specifications

Programmable Logic Devices (PLD) PAL16R4AMWB attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

In-System Programmable:

No

Organization:

8 Dedicated Inputs, 4 I/O

No. of Outputs:

8

Output Function:

Mixed

No. of Inputs:

12

No. of Product Terms:

64

No. of Dedicated Inputs:

8

No. of I/O Lines:

4

Maximum Clock Frequency:

25 MHz

Propagation Delay:

30 ns

Technology:

TTL

Architecture:

PAL-TYPE

Sub-Category:

Programmable Logic Devices

Power Characteristics

Nominal Supply Voltage:

5

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage:

5.5 V

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

125 °C (257 °F)

Minimum Operating Temperature:

-55 °C (-67 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic, Glass-Sealed

Package Style (Meter):

Flatpack

Package Code:

DFP

Package Shape:

Package Equivalence Code:

FL20,.3

Width:

6.92 mm

Length:

13.09 mm

Maximum Seated Height:

2.54 mm

Packing Method:

Tube

Terminal Characteristcs

Terminal Position:

Dual

Terminal Form:

No. of Terminals:

20

Terminal Pitch:

1.27 mm

Terminal Finish:

Tin/Lead

Standards

JESD-30 Code:

R-GDFP-F20

JESD-609 Code:

e0

JTAG Boundary Scan Test:

No

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Trade Compliance

PAL16R4AMWB Programmable ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-264-3010, 5962012643010

NIIN

012643010

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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