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ONET2501PARGTT

Texas Instruments

ONET2501PARGTT by Texas Instruments

ONET2501PARGTT by Texas Instruments is an ATM/SONET/SDH circuit in a square chip carrier package with 16 terminals. It operates b/w -40 to 85°C, supports SDH and SONET applications, and has a nominal voltage of 3.3V. This telecom IC features a terminal pitch of 0.5mm and is suitable for industrial use.

Median Price

$8.660

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,500 parts In-Stock

1+ parts

-

100+ parts

$7.500

1k+ parts

$6.710

10k+ parts

$6.310

5,500

-

$7.500

$6.710

$6.310

DigiKey

USA . 5,500 parts In-Stock

1+ parts

-

100+ parts

$8.660

1k+ parts

-

10k+ parts

-

5,500

-

$8.660

-

-

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$9.375

1k+ parts

$8.387

10k+ parts

$7.888

2,500

-

$9.375

$8.387

$7.888

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,200 parts In-Stock

1+ parts

$7.914

100+ parts

-

1k+ parts

-

10k+ parts

-

2,200

$7.914

-

-

-

Vyrian

USA . 3,627 parts In-Stock

1+ parts

$8.330

100+ parts

-

1k+ parts

-

10k+ parts

-

3,627

$8.330

-

-

-

DigiKey Marketplace

USA . 5,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,495 parts In-Stock

1+ parts

$7.497

100+ parts

-

1k+ parts

-

10k+ parts

-

3,495

$7.497

-

-

-

Parana Technologies

USA . 167 parts In-Stock

1+ parts

$11.036

100+ parts

-

1k+ parts

$11.495

10k+ parts

-

167

$11.036

-

$11.495

-

DigiPath Technology Company

USA . 1,383 parts In-Stock

1+ parts

$12.152

100+ parts

$11.180

1k+ parts

-

10k+ parts

-

1,383

$12.152

$11.180

-

-

ChromeModa Solutions

Germany . 4,751 parts In-Stock

1+ parts

$12.400

100+ parts

$10.168

1k+ parts

-

10k+ parts

-

4,751

$12.400

$10.168

-

-

IDEA Electronic Components Group

UK . 531 parts In-Stock

1+ parts

$12.400

100+ parts

$11.780

1k+ parts

$11.160

10k+ parts

-

531

$12.400

$11.780

$11.160

-

Microchip USA

USA . 4,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,140

-

-

-

-

Overview

Unlock the power of high-quality, reliable telecom circuits with the ONET2501PARGTT by Texas Instruments. Designed with precision and expertise, this ATM/SONET/SDH circuit offers exceptional performance in SDH and SONET applications. With a durable plastic/epoxy package body and innovative chip carrier style, this product boasts a wide temperature range and nickel palladium gold terminal finish for optimal functionality. Experience seamless connectivity and superior efficiency with the ONET2501PARGTT, setting new standards in telecom IC technology. Elevate your projects with Texas Instruments' cutting-edge solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and reliability to the product while keeping it lightweight.

Surface Mount: YES

Being surface mount compatible makes the product easier to integrate into circuits and PCBs, increasing convenience during assembly.

No. of Terminals: 16

Having 16 terminals allows for efficient connectivity and communication within the ATM/SONET/SDH circuit, enhancing its overall functionality.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable performance even in demanding industrial environments.

Nominal Supply Voltage: 3.3 V

The 3.3 V nominal supply voltage is common in many systems, making this product compatible with a wide range of applications.

Technical Specifications

ATM/SONET/SDH Circuits ONET2501PARGTT attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET2501PARGTT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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