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ONET4251PARGTRG4

Texas Instruments

ONET4251PARGTRG4 by Texas Instruments

ONET4251PARGTRG4 by Texas Instruments is an ATM/SONET/SDH circuit with a 3.3V supply voltage and 16 terminals in a square package shape. It operates in industrial temperature range (-40 to 85°C) and has a low supply current of 0.04mA, making it ideal for telecom applications requiring high-speed data transmission. The chip carrier package style with very thin profile and surface mount capability enhances its versatility in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,966 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Digiode

USA . 700 parts In-Stock

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700

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AZTECH Wire

Italy . 507 parts In-Stock

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$7.225

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Parana Technologies

USA . 917 parts In-Stock

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$8.688

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$9.368

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DigiPath Technology Company

USA . 1,611 parts In-Stock

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$9.567

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ChromeModa Solutions

Germany . 4,715 parts In-Stock

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$9.762

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$8.005

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$9.762

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IDEA Electronic Components Group

UK . 1,649 parts In-Stock

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$9.762

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$9.274

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$8.786

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Corohmni

South Africa . 107 parts In-Stock

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$17.059

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Ampacity Inc.

Singapore . 1,096 parts In-Stock

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$39.000

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One Stop Electronics

USA . 581 parts In-Stock

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$754.000

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Corphita

USA . 3,103 parts In-Stock

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Metaverse IC Inc.

Canada . 2,778 parts In-Stock

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Argo Parts USA

USA . 1,328 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Aranea Global

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100

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Overview

Elevate your network performance with the ONET4251PARGTRG4 by Texas Instruments, a top-tier manufacturer known for delivering exceptional quality and reliability. This versatile ATM/SONET/SDH circuit is designed to optimize your telecom systems, offering seamless integration and unmatched efficiency. With a compact square package body and advanced features like terminal finish in nickel palladium gold, this product guarantees superior performance even in industrial settings. Experience the value of cutting-edge technology and elevate your network capabilities with the ONET4251PARGTRG4 - the perfect solution for your networking needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability, making the product suitable for a variety of environments.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Power Supplies (V): 3.3

Operating at a standard power supply voltage of 3.3V ensures compatibility with common electronic systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand demanding conditions without performance degradation.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V is commonly used in electronics, making integration with existing systems seamless.

Technical Specifications

ATM/SONET/SDH Circuits ONET4251PARGTRG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

.04 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET4251PARGTRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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