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ONET4251PARGTTG4

Texas Instruments

ONET4251PARGTTG4 by Texas Instruments

ONET4251PARGTTG4 by Texas Instruments is an ATM/SONET/SDH circuit with a 3.3V supply voltage and 16 terminals in a square package shape. It operates in industrial temperature range (-40 to 85 °C) and has a low supply current of 0.04 mA, making it ideal for telecom applications requiring high-speed data transmission. The chip carrier package style with very thin profile and no-lead terminal form ensures efficient performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,701 parts In-Stock

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Digiode

USA . 1,203 parts In-Stock

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Nova Conductors

Japan . 27 parts In-Stock

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Parana Technologies

USA . 1,351 parts In-Stock

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$8.831

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$9.517

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$8.831

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$9.517

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DigiPath Technology Company

USA . 1,016 parts In-Stock

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$9.725

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$8.947

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$9.725

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IDEA Electronic Components Group

UK . 814 parts In-Stock

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$9.923

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$9.427

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$8.931

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814

$9.923

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$8.931

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ChromeModa Solutions

Germany . 768 parts In-Stock

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$9.923

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$8.137

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768

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$8.137

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AZTECH Wire

Italy . 410 parts In-Stock

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$12.252

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Corohmni

South Africa . 479 parts In-Stock

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$16.061

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$16.061

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Ampacity Inc.

Singapore . 1,245 parts In-Stock

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$86.000

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Component Stockers USA

USA . 357 parts In-Stock

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$99.990

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One Stop Electronics

USA . 1,171 parts In-Stock

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$997.000

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Argo Parts USA

USA . 1,364 parts In-Stock

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Continental Prestige Electronics

USA . 1,044 parts In-Stock

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Corphita

USA . 1,001 parts In-Stock

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Perfect Parts

USA . 874 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the ONET4251PARGTTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology in the category of ATM/SONET/SDH Circuits. This product offers exceptional value and benefits to customers, providing high-performance solutions for a wide range of applications. With its innovative design and top-notch features, the ONET4251PARGTTG4 is the perfect choice for your electronic needs.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

This material provides durability and protection for the circuit, ensuring long-term reliability.

Surface Mount : YES

Being surface mountable allows for easy and efficient integration into circuit boards.

Power Supplies (V) : 3.3

Operates at a common and standardized voltage, making it compatible with a wide range of systems.

No. of Terminals : 16

Sufficient number of terminals for connecting various components and ensuring proper functionality.

Maximum Operating Temperature : 85 °C

Can withstand high temperatures, making it suitable for industrial environments.

Minimum Operating Temperature : -40 °C

Capable of functioning in low-temperature conditions, offering versatility in deployment.

Terminal Finish : NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for stable performance.

Width : 3 mm

Compact width allows for space-saving integration in crowded circuit layouts.

Peak Reflow Temperature °C : 260

Withstands high reflow temperatures during manufacturing processes without damage.

Temperature Grade : INDUSTRIAL

Designed to meet industrial-grade temperature requirements for reliable operation in demanding conditions.

Terminal Form : NO LEAD

Lead-free terminal form is environmentally friendly and compliant with regulations.

Nominal Supply Voltage : 3.3 V

Runs on a standard voltage, simplifying power supply design and compatibility.

Technical Specifications

ATM/SONET/SDH Circuits ONET4251PARGTTG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

ATM/SONET/SDH ICs

Maximum Supply Current:

.04 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET4251PARGTTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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