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ONET1130ECRSMR

Texas Instruments

ONET1130ECRSMR by Texas Instruments

ONET1130ECRSMR by Texas Instruments is a 32-terminal ATM/SONET/SDH transceiver chip carrier with a very thin profile. It operates in industrial temperature range (-40 to 100°C) and has a nominal voltage of 2.5V, making it suitable for SONET applications. The package body material is plastic/epoxy, with surface mount capability and terminal finish of Ni/Pd/Au.

Median Price

$22.875

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 23,703 parts In-Stock

1+ parts

$22.875

100+ parts

$20.333

1k+ parts

$14.951

10k+ parts

-

23,703

$22.875

$20.333

$14.951

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,801 parts In-Stock

1+ parts

$21.731

100+ parts

-

1k+ parts

-

10k+ parts

-

2,801

$21.731

-

-

-

Vyrian

USA . 4,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,428

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,252 parts In-Stock

1+ parts

$7.628

100+ parts

-

1k+ parts

$8.145

10k+ parts

-

2,252

$7.628

-

$8.145

-

DigiPath Technology Company

USA . 1,564 parts In-Stock

1+ parts

$8.400

100+ parts

$7.728

1k+ parts

-

10k+ parts

-

1,564

$8.400

$7.728

-

-

ChromeModa Solutions

Germany . 4,329 parts In-Stock

1+ parts

$8.571

100+ parts

$7.028

1k+ parts

-

10k+ parts

-

4,329

$8.571

$7.028

-

-

IDEA Electronic Components Group

UK . 943 parts In-Stock

1+ parts

$8.571

100+ parts

$8.142

1k+ parts

$7.714

10k+ parts

-

943

$8.571

$8.142

$7.714

-

AZTECH Wire

Italy . 122 parts In-Stock

1+ parts

$15.250

100+ parts

-

1k+ parts

-

10k+ parts

-

122

$15.250

-

-

-

Semicontronic

India . 23,606 parts In-Stock

1+ parts

$19.440

100+ parts

$18.954

1k+ parts

$18.857

10k+ parts

-

23,606

$19.440

$18.954

$18.857

-

Corphita

USA . 4,197 parts In-Stock

1+ parts

$20.588

100+ parts

-

1k+ parts

-

10k+ parts

-

4,197

$20.588

-

-

-

Corohmni

South Africa . 328 parts In-Stock

1+ parts

$22.875

100+ parts

-

1k+ parts

-

10k+ parts

-

328

$22.875

-

-

-

Lixinc

USA . 5,684 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,684

-

-

-

-

Overview

Experience the seamless connectivity and reliability with the ONET1130ECRSMR by Texas Instruments. As a trusted leader in innovative technology, Texas Instruments delivers top-notch quality in every product. This ATM/SONET/SDH Circuits device is designed for optimal performance in SONET applications, offering unparalleled value and benefits to customers. With its advanced features and robust construction, this chip carrier ensures smooth operation and efficiency, making it the perfect choice for your telecom needs. Trust Texas Instruments to elevate your connectivity experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage during installation and use.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Operating Temperature: 100 °C

Ensures reliable operation even in high-temperature environments, making it suitable for industrial settings.

Nominal Supply Voltage: 2.5 V

Low power consumption at a standard voltage level, making it energy-efficient and compatible with various systems.

Applications: SONET

Specifically designed for SONET networks, ensuring optimal performance and compatibility in telecommunications applications.

Technical Specifications

ATM/SONET/SDH Circuits ONET1130ECRSMR attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SONET

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.16SQ,16

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current:

266 mA

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

ONET1130ECRSMR Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B.1

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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