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ONET1151PRGTR

Texas Instruments

ONET1151PRGTR by Texas Instruments

ONET1151PRGTR by Texas Instruments is a telecom IC with 16 terminals, operating at -40 to 100°C. It supports SDH and SONET applications, with a supply voltage of 3.3V and max current of 52mA. This surface-mount chip carrier has a square shape, measuring 3x3mm in size.

Median Price

$3.798

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 22,843 parts In-Stock

1+ parts

$3.798

100+ parts

$3.328

1k+ parts

$1.880

10k+ parts

-

22,843

$3.798

$3.328

$1.880

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,931 parts In-Stock

1+ parts

$3.608

100+ parts

-

1k+ parts

-

10k+ parts

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1,931

$3.608

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-

Chip Stock

USA . 13,643 parts In-Stock

1+ parts

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13,643

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Vyrian

USA . 6,701 parts In-Stock

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6,701

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,537 parts In-Stock

1+ parts

$3.418

100+ parts

-

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-

10k+ parts

-

1,537

$3.418

-

-

-

Parana Technologies

USA . 1,611 parts In-Stock

1+ parts

$6.175

100+ parts

-

1k+ parts

$6.942

10k+ parts

-

1,611

$6.175

-

$6.942

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DigiPath Technology Company

USA . 579 parts In-Stock

1+ parts

$6.799

100+ parts

$6.255

1k+ parts

-

10k+ parts

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579

$6.799

$6.255

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ChromeModa Solutions

Germany . 5,596 parts In-Stock

1+ parts

$6.938

100+ parts

$5.689

1k+ parts

-

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5,596

$6.938

$5.689

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IDEA Electronic Components Group

UK . 1,727 parts In-Stock

1+ parts

$6.938

100+ parts

-

1k+ parts

$6.244

10k+ parts

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1,727

$6.938

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$6.244

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AZTECH Wire

Italy . 1,019 parts In-Stock

1+ parts

$11.300

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1,019

$11.300

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A-Z Elektronik GmbH

Germany . 5,060 parts In-Stock

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5,060

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Lixinc

USA . 3,618 parts In-Stock

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3,618

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Futuretech Components

Singapore . 486 parts In-Stock

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486

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Overview

Enhance your telecom systems with the ONET1151PRGTR by Texas Instruments. This cutting-edge ATM/SONET/SDH circuit offers top-notch quality and reliability, thanks to its renowned manufacturer. Ideal for SDH and SONET applications, this versatile chip carrier boasts a very thin profile and nickel/palladium/gold terminal finish. With a wide operating temperature range and low supply current, customers can trust in the value and benefits of this industrial-grade component. Upgrade your network performance with the ONET1151PRGTR today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly on circuit boards, saving time and reducing costs.

Package Shape: SQUARE

The square package shape provides a compact and space-efficient design, ideal for applications where size is a critical factor.

No. of Terminals: 16

The high number of terminals allows for multiple connections and functionalities, enhancing the product's versatility.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles ensures effective heat dissipation and minimal space requirements.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this product can withstand demanding industrial environments and temperature conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extremely cold environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of Nickel/Palladium/Gold terminal finish provides excellent conductivity, corrosion resistance, and durability.

Terminal Position: QUAD

The quad terminal position allows for easy and secure connections, enhancing the product's reliability.

Maximum Seated Height: 1 mm

The low seated height contributes to a slim profile and helps in reducing the overall size of the product.

Width: 3 mm

The narrow width makes this product suitable for space-constrained applications without compromising on functionality.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering during assembly, leading to a robust and reliable connection.

Length: 3 mm

The compact length of 3 mm contributes to a small footprint, making this product ideal for compact designs.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures consistent performance in harsh industrial environments with varying temperature conditions.

Applications: SDH; SONET

Designed specifically for SDH and SONET applications, this product meets the requirements of high-speed and reliable communication networks.

Terminal Form: NO LEAD

The no-lead terminal form is environmentally friendly and complies with industry regulations on lead-free manufacturing.

Maximum Supply Current: 52 mA

With a maximum supply current of 52 mA, this product offers efficient power consumption for energy-conscious applications.

Telecom IC Type: ATM/SONET/SDH SUPPORT CIRCUIT

Specifically designed to support ATM/SONET/SDH circuits, this product provides reliable performance in telecommunications systems.

Nominal Supply Voltage: 3.3 V

The 3.3 V nominal supply voltage ensures compatibility with standard power sources, simplifying integration into existing systems.

Terminal Pitch: 0.5 mm

The 0.5 mm terminal pitch contributes to a high-density design, enabling more connections in a limited space.

Moisture Sensitivity Level (MSL): 2

With a moisture sensitivity level of 2, this product is suitable for standard manufacturing processes and storage conditions.

Technical Specifications

ATM/SONET/SDH Circuits ONET1151PRGTR attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current:

52 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Trade Compliance

ONET1151PRGTR Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B.1

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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