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ONET2501PARGTRG4

Texas Instruments

ONET2501PARGTRG4 by Texas Instruments

ONET2501PARGTRG4 by Texas Instruments is an ATM/SONET/SDH circuit with 16 terminals in a square chip carrier package. It operates b/w -40 to 85°C, supporting SDH and SONET applications at a nominal voltage of 3.3V. The terminal finish is nickel palladium gold, suitable for industrial-grade telecom ICs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,312 parts In-Stock

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2,312

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Digiode

USA . 1,908 parts In-Stock

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1,908

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,891 parts In-Stock

1+ parts

$5.962

100+ parts

-

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$6.743

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1,891

$5.962

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$6.743

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DigiPath Technology Company

USA . 1,966 parts In-Stock

1+ parts

$6.565

100+ parts

$6.040

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1,966

$6.565

$6.040

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ChromeModa Solutions

Germany . 3,006 parts In-Stock

1+ parts

$6.699

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$5.493

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3,006

$6.699

$5.493

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IDEA Electronic Components Group

UK . 2,310 parts In-Stock

1+ parts

$6.699

100+ parts

-

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$6.029

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2,310

$6.699

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$6.029

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AZTECH Wire

Italy . 224 parts In-Stock

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$10.541

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224

$10.541

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One Stop Electronics

USA . 424 parts In-Stock

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$430.000

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424

$430.000

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Microchip USA

USA . 5,885 parts In-Stock

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Corphita

USA . 3,047 parts In-Stock

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3,047

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Perfect Parts

USA . 874 parts In-Stock

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874

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Overview

Upgrade your telecom systems with the ONET2501PARGTRG4 by Texas Instruments, a top-notch ATM/SONET/SDH circuit that guarantees superior quality and reliability. Designed with precision and expertise by Texas Instruments, this chip carrier with a very thin profile offers optimal performance in SDH and SONET applications. With a nominal supply voltage of 3.3V and industrial temperature grade, this product provides unmatched value and benefits to customers seeking state-of-the-art telecom IC solutions. Trust Texas Instruments to deliver excellence in telecommunications technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the circuit components, making it a reliable choice for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Package Shape: SQUARE

The square package shape helps with alignment and positioning during installation, ensuring a secure fit on the circuit board.

Nominal Supply Voltage: 3.3 V

With a nominal supply voltage of 3.3V, this circuit is compatible with a wide range of systems and can easily integrate into existing setups.

Applications: SDH; SONET

Designed for SDH and SONET applications, this circuit is optimized for high-speed telecommunications networks, making it an ideal choice for such industries.

Technical Specifications

ATM/SONET/SDH Circuits ONET2501PARGTRG4 attributes and parameters. Explore more ATM/SONET/SDH Circuits devices from Texas Instruments

Specs

Applications:

SDH; SONET

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

ONET2501PARGTRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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