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LM3S600-IQN50-C2T

Texas Instruments

LM3S600-IQN50-C2T by Texas Instruments

Texas Instruments LM3S600-IQN50-C2T microcontroller features 32-bit Cortex-M3 CPU, 8KB RAM, and 32KB ROM. Ideal for industrial applications with peripherals like timers and UARTs, operating at -40 to 85°C temperature range. Package style is flatpack with 48 terminals in a square shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,483 parts In-Stock

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3,483

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Digiode

USA . 2,132 parts In-Stock

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2,132

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Distributors (Availability)

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AZTECH Wire

Italy . 190 parts In-Stock

1+ parts

$15.330

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190

$15.330

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One Stop Electronics

USA . 1,348 parts In-Stock

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$34.000

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$34.000

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Parana Technologies

USA . 1,842 parts In-Stock

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$65.032

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1,842

$65.032

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DigiPath Technology Company

USA . 1,738 parts In-Stock

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$71.609

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$65.880

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1,738

$71.609

$65.880

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IDEA Electronic Components Group

UK . 1,227 parts In-Stock

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$73.070

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$69.416

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$65.763

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1,227

$73.070

$69.416

$65.763

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ChromeModa Solutions

Germany . 582 parts In-Stock

1+ parts

$73.070

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$59.917

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582

$73.070

$59.917

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Corphita

USA . 4,126 parts In-Stock

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Microchip USA

USA . 293 parts In-Stock

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Overview

Elevate your next project with the LM3S600-IQN50-C2T microcontroller by Texas Instruments. Designed with cutting-edge technology and precision engineering, this powerful device offers unmatched performance in a compact package. Whether you're working on IoT applications, robotics, or industrial automation, this microcontroller delivers reliability, efficiency, and versatility. Experience seamless connectivity, low power consumption, and high-speed processing with the LM3S600-IQN50-C2T. Upgrade to excellence today and unlock endless possibilities for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the microcontroller, ensuring a longer lifespan.

Integrated Cache: YES

The integrated cache helps improve processing speed by storing frequently accessed data, making the microcontroller more efficient.

Maximum Supply Voltage: 3.6 V

A higher maximum supply voltage allows for more flexibility in terms of power input, making it suitable for various applications.

CPU Family: CORTEX-M3

Being part of the CORTEX-M3 family ensures reliable performance and compatibility with other devices in the same family.

ROM Programmability: FLASH

The ROM programmability using FLASH technology allows for easy and quick updates to the microcontroller's firmware, enhancing its flexibility and adaptability.

Technical Specifications

Microcontrollers LM3S600-IQN50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

NO

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e3

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

36

No. of Serial I/Os:

4

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

TIMER(3), WDT

Trade Compliance

LM3S600-IQN50-C2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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