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LM3S6G11-IBZ80-A2

Texas Instruments

LM3S6G11-IBZ80-A2 by Texas Instruments

LM3S6G11-IBZ80-A2 by Texas Instruments is a 32-bit Cortex-M3 microcontroller with 108 terminals, operating at a max frequency of 16.384 MHz. It features 46 I/O lines, 65536 bytes of RAM, and FLASH ROM programmability. Ideal for industrial applications requiring high-speed processing and efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,270 parts In-Stock

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Digiode

USA . 867 parts In-Stock

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Nova Conductors

Japan . 58 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 319 parts In-Stock

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$14.000

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319

$14.000

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AZTECH Wire

Italy . 495 parts In-Stock

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$14.721

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$14.721

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Semicontronic

India . 1,264 parts In-Stock

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$16.000

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$15.600

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$15.520

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$16.000

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One Stop Electronics

USA . 913 parts In-Stock

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$23.000

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Parana Technologies

USA . 625 parts In-Stock

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$39.286

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$39.286

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ChromeModa Solutions

Germany . 3,837 parts In-Stock

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$44.142

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$36.196

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IDEA Electronic Components Group

UK . 201 parts In-Stock

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$44.142

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$41.935

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$39.728

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201

$44.142

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$39.728

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Corohmni

South Africa . 455 parts In-Stock

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$68.010

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Continental Prestige Electronics

USA . 6,780 parts In-Stock

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Argo Parts USA

USA . 4,298 parts In-Stock

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Corphita

USA . 3,570 parts In-Stock

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DigiPath Technology Company

USA . 1,771 parts In-Stock

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$39.798

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Microchip USA

USA . 228 parts In-Stock

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Overview

Unlock the power of innovation with the LM3S6G11-IBZ80-A2 by Texas Instruments. As a leading manufacturer in the field of microcontrollers, Texas Instruments delivers unmatched quality and reliability. This microcontroller is perfect for a wide range of applications, from industrial automation to consumer electronics. With its advanced features and cutting-edge technology, this product offers customers exceptional value and performance. Experience seamless integration and superior functionality with the LM3S6G11-IBZ80-A2 from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the microcontroller, making it suitable for various environments.

Surface Mount: YES

Surface mount technology allows for easier and more efficient manufacturing processes.

Maximum Supply Voltage: 3.6 V

With a maximum supply voltage of 3.6V, this microcontroller can handle power inputs efficiently.

Bit Size: 32

A 32-bit microcontroller offers higher processing capabilities and performance compared to lower bit sizes.

Power Supplies (V): 1.3,3.3

Support for multiple power supply voltages allows for flexibility in system design and power optimization.

No. of Terminals: 108

Having 108 terminals enables a wide range of connectivity options for peripheral devices and components.

Maximum Clock Frequency: 16.384 MHz

A high maximum clock frequency allows for fast processing and response times in applications.

RAM Bytes: 65536

With a large RAM size, the microcontroller can handle complex computational tasks and store temporary data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller efficient and reliable.

PWM Channels: YES

Support for PWM channels enables precise control over analog devices and allows for efficient power management.

Technical Specifications

Microcontrollers LM3S6G11-IBZ80-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

393216

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

210 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S6G11-IBZ80-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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