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LM3S9B96-IQC80-C3T

Texas Instruments

LM3S9B96-IQC80-C3T by Texas Instruments

Texas Instruments LM3S9B96-IQC80-C3T microcontroller features 32-bit architecture, 262144 ROM words, and 98304 RAM bytes. Ideal for industrial applications, it operates at up to 80 MHz with a supply voltage range of 1.2-3.3V and offers PWM channels and ADC capabilities for versatile system integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,894 parts In-Stock

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Digiode

USA . 318 parts In-Stock

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Nova Conductors

Japan . 92 parts In-Stock

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One Stop Electronics

USA . 686 parts In-Stock

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$14.000

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AZTECH Wire

Italy . 802 parts In-Stock

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$15.326

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Ampacity Inc.

Singapore . 1,575 parts In-Stock

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$17.000

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Parana Technologies

USA . 1,525 parts In-Stock

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DigiPath Technology Company

USA . 509 parts In-Stock

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$77.199

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$71.023

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IDEA Electronic Components Group

UK . 1,896 parts In-Stock

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$78.774

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$74.835

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$70.897

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ChromeModa Solutions

Germany . 1,054 parts In-Stock

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$78.774

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$64.595

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Corphita

USA . 2,658 parts In-Stock

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Continental Prestige Electronics

USA . 2,408 parts In-Stock

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Argo Parts USA

USA . 894 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Microchip USA

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Overview

Unlock the endless possibilities of innovation with the LM3S9B96-IQC80-C3T microcontroller by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers a powerful solution that is perfect for a wide range of applications. This versatile microcontroller offers unparalleled value, providing customers with exceptional performance, ease of use, and advanced features. Whether you're working on robotics, IoT devices, or industrial automation, this microcontroller is sure to exceed your expectations and bring your projects to life. Experience the difference with Texas Instruments' LM3S9B96-IQC80-C3T.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, ideal for portable electronic devices.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of the microcontroller onto a circuit board.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage allows for compatibility with a wide range of power sources.

Bit Size: 32

32-bit architecture provides enhanced processing power and performance for complex applications.

Power Supplies (V): 1.2,3.3

Support for multiple power supply options allows for flexibility in different system designs.

No. of Terminals: 100

Having a larger number of terminals enables connectivity with a variety of external components and peripherals.

Minimum Operating Temperature: -40 °C

The wide temperature range makes this microcontroller suitable for use in harsh environmental conditions.

ADC Channels: YES

Built-in ADC channels allow for analog sensor inputs, enabling more versatile applications.

ROM Words: 262144

Large ROM capacity provides ample space for program storage and data retention.

Maximum Clock Frequency: 80 MHz

High clock frequency allows for fast and efficient operation of the microcontroller.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable.

PWM Channels: YES

PWM channels provide precise control over output signals, essential for applications like motor control and LED dimming.

Technical Specifications

Microcontrollers LM3S9B96-IQC80-C3T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

65

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S9B96-IQC80-C3T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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