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LM3S9B96-IQC80-C1

Texas Instruments

LM3S9B96-IQC80-C1 by Texas Instruments

LM3S9B96-IQC80-C1 by Texas Instruments is a 32-bit microcontroller with 262144 ROM words and 98304 RAM bytes. It operates at a max clock frequency of 50 MHz, suitable for industrial applications requiring high-speed processing. With ADC and DMA channels, it offers versatile I/O capabilities in a compact flatpack package.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 2,773 parts In-Stock

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Digiode

USA . 1,774 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Connect4Technologies Inc.

Canada . 14 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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Ampacity Inc.

Singapore . 1,403 parts In-Stock

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$4.000

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AZTECH Wire

Italy . 354 parts In-Stock

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One Stop Electronics

USA . 720 parts In-Stock

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$27.000

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Parana Technologies

USA . 902 parts In-Stock

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$55.757

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DigiPath Technology Company

USA . 749 parts In-Stock

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$61.395

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ChromeModa Solutions

Germany . 6,062 parts In-Stock

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IDEA Electronic Components Group

UK . 1,337 parts In-Stock

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Lixinc

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Corphita

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Authorized Procurement Solutions

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Microchip USA

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Elevate your projects with the LM3S9B96-IQC80-C1 microcontroller from Texas Instruments. Designed with precision and reliability in mind, this powerful device boasts a wide range of applications in various industries. With its advanced features and sleek design, it offers unmatched value and performance to customers seeking top-notch solutions for their next project. Whether you're a seasoned professional or a DIY enthusiast, this microcontroller is sure to exceed your expectations and take your creations to the next level. Experience the difference with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material is durable and offers good protection for the microcontroller, ensuring its longevity and reliability.

Surface Mount: YES

Surface mount capability makes it easy to integrate this microcontroller into compact circuit designs, saving space and simplifying assembly.

Maximum Supply Voltage: 1.32 V

The maximum supply voltage of 1.32 V ensures safe operation and helps prevent damage to the microcontroller.

Bit Size: 32

A 32-bit architecture provides enhanced performance and computational capabilities, making it suitable for a wide range of applications.

Power Supplies (V): 1.2,3.3

Support for multiple power supply voltages (1.2V and 3.3V) allows flexibility in system design and compatibility with various components.

No. of Terminals: 100

Having 100 terminals enables extensive connectivity options and facilitates interfacing with external devices or peripherals.

Minimum Supply Voltage: 1.08 V

The minimum supply voltage of 1.08 V ensures stable operation even under low-power conditions, increasing the versatility of the microcontroller.

ADC Channels: YES

Built-in analog-to-digital converter (ADC) channels allow for accurate and efficient conversion of analog signals, making it suitable for sensor applications.

DMA Channels: YES

Direct memory access (DMA) channels enhance data transfer speeds and efficiency, particularly important for real-time processing tasks.

Maximum Clock Frequency: 50 MHz

A high maximum clock frequency of 50 MHz enables rapid data processing and execution of instructions, contributing to overall system performance.

Technical Specifications

Microcontrollers LM3S9B96-IQC80-C1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

50 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

65

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.08 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S9B96-IQC80-C1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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