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F28M36H53B2ZWTQ

Texas Instruments

F28M36H53B2ZWTQ by Texas Instruments

The Texas Instruments F28M36H53B2ZWTQ microcontroller features a peak reflow temperature of 260°C, CMOS technology, and MSL level 3. Ideal for applications requiring high-performance RISC-based microcontrollers with TIN SILVER COPPER terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,211 parts In-Stock

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Digiode

USA . 3,926 parts In-Stock

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AZTECH Wire

Italy . 192 parts In-Stock

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$10.964

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192

$10.964

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One Stop Electronics

USA . 1,565 parts In-Stock

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$19.000

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Parana Technologies

USA . 2,253 parts In-Stock

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$61.645

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DigiPath Technology Company

USA . 367 parts In-Stock

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$67.879

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$62.448

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367

$67.879

$62.448

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ChromeModa Solutions

Germany . 3,655 parts In-Stock

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$69.264

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$56.796

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$56.796

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IDEA Electronic Components Group

UK . 721 parts In-Stock

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$69.264

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$65.801

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$62.338

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721

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$62.338

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Component Stockers USA

USA . 156 parts In-Stock

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$481.660

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Corphita

USA . 1,351 parts In-Stock

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Microchip USA

USA . 434 parts In-Stock

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Northwest PG Solutions

USA . 229 parts In-Stock

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Native Components

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Overview

Unlock the power of innovation with the F28M36H53B2ZWTQ microcontroller by Texas Instruments. Renowned for their quality and reliability, Texas Instruments brings you a cutting-edge solution for a wide range of applications. This microcontroller offers unmatched value with its advanced features and capabilities, providing customers with the benefits of increased efficiency, performance, and flexibility. Whether you're working on IoT devices, industrial automation, or consumer electronics, the F28M36H53B2ZWTQ is the perfect choice to bring your ideas to life. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, making this microcontroller more durable and reliable in various environments.

Terminal Finish: SILVER

Silver terminal finish offers excellent conductivity and oxidation resistance, ensuring high-performance connectivity for this microcontroller.

Terminal Finish: COPPER

Copper terminal finish provides superior electrical conductivity, enhancing the overall efficiency and performance of this microcontroller.

Maximum Time At Peak Reflow Temperature (s): 30

Having a maximum time of 30 seconds at peak reflow temperature ensures that the microcontroller is subjected to optimal thermal conditions during manufacturing, leading to improved solder joint reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for proper soldering of components onto the microcontroller, ensuring stable connections and functionality.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC-based microcontroller allows for efficient and fast processing of instructions, making it suitable for applications requiring high-performance computing.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making this microcontroller energy-efficient and reliable in noisy environments.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this microcontroller can withstand exposure to moderate levels of moisture during handling and storage without risking damage or performance degradation.

Technical Specifications

Microcontrollers F28M36H53B2ZWTQ attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

260

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

F28M36H53B2ZWTQ Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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