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DS7832J

Texas Instruments

DS7832J by Texas Instruments

DS7832J by Texas Instruments is a LINE DRIVER with 16 terminals, operating at -55 to 125 °C. It offers a max transmit delay of 25 ns and differential output capability. Ideal for military-grade applications requiring fast signal transmission with low power consumption.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 8,232 parts In-Stock

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Anansix

USA . 1,161 parts In-Stock

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Digiode

USA . 806 parts In-Stock

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Electronic Expediters

USA . 28 parts In-Stock

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Resion

USA . 8 parts In-Stock

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Electro Mavin

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Native Components

USA . 30 parts In-Stock

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$0.109

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$0.105

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Northwest PG Solutions

USA . 1,969 parts In-Stock

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$0.120

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Benley Electronics

USA . 1 parts In-Stock

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Parana Technologies

USA . 1,831 parts In-Stock

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$11.997

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$12.404

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DigiPath Technology Company

USA . 1,914 parts In-Stock

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$13.210

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$12.154

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ChromeModa Solutions

Germany . 4,559 parts In-Stock

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$13.480

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IDEA Electronic Components Group

UK . 146 parts In-Stock

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One Stop Electronics

USA . 1,370 parts In-Stock

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AZTECH Wire

Italy . 270 parts In-Stock

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Corphita

USA . 5,185 parts In-Stock

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Overview

Enhance your electronic projects with the DS7832J by Texas Instruments, a top-of-the-line line driver & receiver designed to deliver unparalleled performance. With a focus on quality and reliability, Texas Instruments ensures that this product meets the highest industry standards. Whether you're working on industrial automation, telecommunications, or automotive applications, this versatile component offers exceptional value, efficiency, and precision. Stay ahead of the game with the DS7832J and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer high thermal conductivity, making them suitable for applications where heat dissipation is important.

Maximum Transmit Delay: 25 ns

Low transmit delay ensures quick and efficient data transmission, making this product suitable for high-speed communication systems.

Power Supplies (V): 5

Operates on a standard 5V power supply, making it compatible with a wide range of electronic devices.

No. of Terminals: 16

Sufficient number of terminals for connecting to other components and peripherals in a circuit.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Output Characteristics: 3-STATE

3-state output allows for more flexibility in signal control, enhancing the versatility of the product.

Temperature Grade: MILITARY

Military-grade temperature range ensures reliability and performance in harsh environments and critical applications.

Technical Specifications

Line Drivers & Receivers DS7832J attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

2

Maximum High Level Input Current:

.00004 Amp

Interface IC Type:

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Minimum Out Swing:

2 V

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Receive Delay:

0 ns

Sub-Category:

Line Driver or Receivers

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Maximum Transmit Delay:

25 ns

Trade Compliance

DS7832J Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-026-2487, 5962010262487, 5962-01-116-1995, 5962011161995

NIIN

010262487, 011161995

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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