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DS7831J/883B

Texas Instruments

DS7831J/883B by Texas Instruments

DS7831J/883B by Texas Instruments is a MIL-STD-883 Class B Line Driver with 25ns max transmit delay, 5V power supply, and 16 terminals. Ideal for military applications due to its bipolar technology, -55 to 125 °C operating temp range, and dual terminal position.

Median Price

$28.815

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$22.630

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TEDSS.com

USA . 171 parts In-Stock

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$35.000

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Vyrian

USA . 8,825 parts In-Stock

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Digiode

USA . 2,202 parts In-Stock

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Anansix

USA . 764 parts In-Stock

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Electronic Expediters

USA . 76 parts In-Stock

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Manoshevitz Elec. Sales

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Resion

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R&J Components

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ECAB

Sweden . 5 parts In-Stock

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LWI Electronics Inc

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Electro Mavin

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Parana Technologies

USA . 1,130 parts In-Stock

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$4.158

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$4.603

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DigiPath Technology Company

USA . 1,920 parts In-Stock

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$4.579

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ChromeModa Solutions

Germany . 2,522 parts In-Stock

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$4.672

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$3.831

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IDEA Electronic Components Group

UK . 964 parts In-Stock

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$4.672

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$4.205

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One Stop Electronics

USA . 1,136 parts In-Stock

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$6.500

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AZTECH Wire

Italy . 418 parts In-Stock

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$15.352

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Native Components

USA . 37 parts In-Stock

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$343.625

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$336.752

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$333.316

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$329.880

37

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$336.752

$333.316

$329.880

Northwest PG Solutions

USA . 1,363 parts In-Stock

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$377.988

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Glotronic Ltd.

UK . 3,500 parts In-Stock

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Corphita

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Elevate your electronic designs with the DS7831J/883B by Texas Instruments, a top-of-the-line Line Drivers & Receivers module that combines quality and reliability. Manufactured with precision using CERAMIC materials and MIL-STD-883 Class B screening, this product ensures optimal performance even in demanding environments. With fast transmit delay, 3-state output characteristics, and differential output capability, this versatile device is perfect for a wide range of applications. Trust Texas Instruments to deliver cutting-edge technology with the DS7831J/883B, providing value and efficiency to all your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent mechanical and thermal properties, making this product durable and able to withstand high temperatures.

Screening Level: MIL-STD-883 Class B (Modified)

This classification ensures that the product meets high quality and reliability standards, making it suitable for demanding applications.

Maximum Transmit Delay: 25 ns

The low transmit delay ensures fast signal transmission, making this product ideal for high-speed data transfer applications.

Power Supplies (V): 5

The 5V power supply requirement makes this product compatible with standard voltage levels, simplifying integration into existing systems.

Output Characteristics: 3-STATE

The 3-STATE output allows the device to drive the bus either high, low, or be in a high-impedance state, providing flexibility and improved signal integrity.

Minimum Out Swing: 2 V

With a minimum output swing of 2V, this product is capable of driving signals with sufficient voltage levels, ensuring reliable communication.

Temperature Grade: MILITARY

Designed for military applications, this product is built to withstand harsh environmental conditions and operate reliably in extreme temperatures.

Technology: BIPOLAR

Bipolar technology offers high-speed performance and precise signal control, making this product well-suited for precision applications that require fast response times.

Technical Specifications

Line Drivers & Receivers DS7831J/883B attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

2

Maximum High Level Input Current:

.00004 Amp

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Minimum Out Swing:

2 V

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883 Class B (Modified)

Sub-Category:

Line Driver or Receivers

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Transmit Delay:

25 ns

Trade Compliance

DS7831J/883B Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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