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DM383AAAR21F

Texas Instruments

DM383AAAR21F by Texas Instruments

MICROPROCESSOR, RISC; Temperature Grade: OTHER; Terminal Form: BALL; No. of Terminals: 609; Package Code: LFBGA; Package Shape: SQUARE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,297 parts In-Stock

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Digiode

USA . 121 parts In-Stock

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121

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 467 parts In-Stock

1+ parts

$0.402

100+ parts

-

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-

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$0.386

467

$0.402

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-

$0.386

Northwest PG Solutions

USA . 972 parts In-Stock

1+ parts

$0.442

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-

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$0.390

972

$0.442

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$0.390

One Stop Electronics

USA . 1,331 parts In-Stock

1+ parts

$12.000

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1,331

$12.000

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AZTECH Wire

Italy . 403 parts In-Stock

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$13.519

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403

$13.519

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Parana Technologies

USA . 109 parts In-Stock

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$40.888

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109

$40.888

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ChromeModa Solutions

Germany . 5,995 parts In-Stock

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$45.942

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$37.672

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$45.942

$37.672

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IDEA Electronic Components Group

UK . 337 parts In-Stock

1+ parts

$45.942

100+ parts

$43.645

1k+ parts

$41.348

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337

$45.942

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$41.348

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Microchip USA

USA . 2,352 parts In-Stock

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$104.960

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$103.130

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$102.220

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$101.310

2,352

$104.960

$103.130

$102.220

$101.310

Corphita

USA . 4,739 parts In-Stock

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4,739

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DigiPath Technology Company

USA . 1,196 parts In-Stock

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$41.421

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1,196

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$41.421

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Technical Specifications

Microprocessors DM383AAAR21F attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

27

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

16

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B609

JESD-609 Code:

e1

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

609

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.32 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.42 V

Minimum Supply Voltage:

1.28 V

Nominal Supply Voltage:

1.35 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

DM383AAAR21F Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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