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RHFXH162244K-01Q

STMicroelectronics

RHFXH162244K-01Q by STMicroelectronics

RHFXH162244K-01Q by STMicroelectronics is a 4-bit bus driver with a fast propagation delay of 5.2 ns, operating b/w 1.8V and 3.6V. It features a military-grade design for high reliability in harsh environments, supporting up to 12A output current. Ideal for aerospace and defense applications, it ensures robust performance with low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,631 parts In-Stock

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4,631

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Digiode

USA . 3,746 parts In-Stock

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3,746

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Anansix

USA . 2,465 parts In-Stock

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2,465

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 60 parts In-Stock

1+ parts

$7.357

100+ parts

-

1k+ parts

$7.063

10k+ parts

$7.063

60

$7.357

-

$7.063

$7.063

IDEA Electronic Components Group

UK . 406 parts In-Stock

1+ parts

$27.517

100+ parts

-

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$24.765

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-

406

$27.517

-

$24.765

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MKK Technologies

India . 1,506 parts In-Stock

1+ parts

$51.744

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-

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1,506

$51.744

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DigiPath Technology Company

USA . 1,506 parts In-Stock

1+ parts

$51.744

100+ parts

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1,506

$51.744

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Corphita

USA . 3,654 parts In-Stock

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3,654

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Parana Technologies

USA . 248 parts In-Stock

1+ parts

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$32.901

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248

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$32.901

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Overview

Unlock exceptional performance and reliability with the RHFXH162244K-01Q from STMicroelectronics, a trusted leader in semiconductor solutions. Designed for optimal efficiency in bus driver applications, this advanced component delivers rapid signal propagation, ensuring seamless communication in even the most demanding conditions. With its military-grade durability and ceramic, metal-sealed packaging, it’s perfect for aerospace, defense, and industrial uses—offering customers peace of mind and unmatched value!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed co-fired package provides excellent protection against environmental factors, ensuring long-term durability and reliability in harsh conditions.

Propagation Delay At Nominal Supply: 5.2 ns

With a fast propagation delay, this product allows for high-speed data transmission, making it suitable for applications requiring rapid signal processing.

Surface Mount: YES

Surface mount technology facilitates compact PCB designs, leading to reduced footprint and enabling more efficient use of space in electronic devices.

No. of Functions: 4

Offering multiple functions in a single package, it reduces component count and simplifies circuit design, ultimately lowering costs and improving efficiency.

Screening Level: MIL-PRF-38535 Class Q

This high screening level indicates military-grade reliability, making the product suitable for critical applications in aerospace and defense industries.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier integration into various circuit designs, providing flexibility in layout.

No. of Bits: 4

With 4 bits, this device can manage multiple data signals simultaneously, improving communication speed and efficiency.

Nominal Supply Voltage / Vsup (V): 2.3

The low nominal supply voltage ensures low power consumption, making this product highly efficient for battery-operated devices.

Load Capacitance (CL): 30 pF

A load capacitance of 30 pF indicates compatibility with a variety of circuit loads while maintaining signal integrity.

Power Supplies (V): 2.5/3.3

This dual power supply capability allows for greater flexibility in design, accommodating various applications and systems.

No. of Terminals: 48

A higher number of terminals enables more complex connections and functionalities, ideal for intricate electronic designs.

Package Style (Meter): FLATPACK

The flatpack style enhances thermal performance and allows for simplified assembly processes, making it suitable for modern compact applications.

Maximum I (ol): 12 Amp

The ability to handle a maximum output current of 12 Amps makes this product robust enough for high-power applications.

Maximum Operating Temperature: 125 °C

Operating at high temperatures ensures reliability in demanding environments, suitable for industrial and military applications.

Output Characteristics: 3-STATE WITH SERIES RESISTOR

The 3-state output capability with series resistors allows for versatile signal control, reducing bus contention in multi-device systems.

Minimum Operating Temperature: -55 °C

The ability to function in extreme cold temperatures enhances its applicability in outdoor and military environments.

Terminal Position: DUAL

Dual terminal positions provide versatile connection options, optimizing layout design and PCB space.

No. of Ports: 2

Having 2 ports allows for bidirectional data flow, improving communication efficiency between devices.

Maximum Seated Height: 2.72 mm

A low maximum seated height ensures compatibility with space-constrained designs, making it ideal for modern electronic enclosures.

Width: 9.65 mm

Compact width facilitates integration into tighter PCB layouts without compromising electrical performance.

Output Polarity: TRUE

True output polarity offers predictable signal behavior, enhancing accuracy in signal processing applications.

Minimum Supply Voltage (Vsup): 1.8 V

Supporting a low minimum supply voltage enhances power efficiency, making it suitable for energy-sensitive applications.

Length: 15.75 mm

A moderate length allows for easy integration into various sizes of printed circuit boards.

Temperature Grade: MILITARY

Military-grade temperature classification ensures reliability and performance under extreme conditions, ideal for defense applications.

Total Dose: 300k Rad(Si)

The high total dose rating indicates strong radiation resistance, making it suitable for use in space and high-radiation environments.

Technology: CMOS

CMOS technology delivers lower power consumption and higher efficiency, making it suitable for modern low-power applications.

Terminal Form: FLAT

Flat terminals facilitate easier soldering and enhance contact reliability, ensuring robust connections in circuit assemblies.

Terminal Pitch: 0.635 mm

A small terminal pitch allows for dense packaging of components, maximizing the functionality of limited PCB space.

Control Type: ENABLE LOW

The ENABLE LOW control type simplifies signal management and helps reduce power consumption when the device is not in use.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage rating of 3.6 V allows for compatibility with a range of modern digital systems and components.

Technical Specifications

Bus Driver & Transceivers RHFXH162244K-01Q attributes and parameters. Explore more Bus Driver & Transceivers devices from STMicroelectronics

Specs

Control Type:

ENABLE LOW

Family:

ALVC/VCX/A

JESD-30 Code:

R-CDFP-F48

Length:

15.75 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

12 Amp

No. of Bits:

4

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE WITH SERIES RESISTOR

Output Polarity:

TRUE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL48,.4,25

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

2.5/3.3

Propagation Delay At Nominal Supply:

5.2 ns

Propagation Delay (tpd):

5.2 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

2.72 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Total Dose (V):

300k Rad(Si)

Width:

9.65 mm

Trade Compliance

RHFXH162244K-01Q Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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