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RHFAC16244K02V

STMicroelectronics

RHFAC16244K02V by STMicroelectronics

RHFAC16244K02V by STMicroelectronics is a 4-function bus driver with a propagation delay of just 11.5 ns, ideal for high-speed applications. It operates at a nominal voltage of 3.3V and supports military-grade screening up to 125 °C. This CMOS device features dual terminals in a compact flatpack design, ensuring reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,681 parts In-Stock

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4,681

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Digiode

USA . 2,892 parts In-Stock

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2,892

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Anansix

USA . 1,369 parts In-Stock

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1,369

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 454 parts In-Stock

1+ parts

$3.330

100+ parts

-

1k+ parts

$3.196

10k+ parts

$3.196

454

$3.330

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$3.196

$3.196

IDEA Electronic Components Group

UK . 1,661 parts In-Stock

1+ parts

$26.477

100+ parts

-

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$23.829

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1,661

$26.477

-

$23.829

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MKK Technologies

India . 108 parts In-Stock

1+ parts

$49.788

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108

$49.788

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DigiPath Technology Company

USA . 108 parts In-Stock

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$49.788

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108

$49.788

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Corphita

USA . 4,006 parts In-Stock

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4,006

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Parana Technologies

USA . 1,777 parts In-Stock

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$31.657

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1,777

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$31.657

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Overview

Elevate your designs with the RHFAC16244K02V from STMicroelectronics, a premier choice in bus drivers and transceivers. Built to endure with military-grade quality, this robust component promises exceptional performance, featuring rapid propagation delay and versatile voltage options. Perfect for demanding applications, it enhances reliability and efficiency, ensuring your projects excel while delivering unmatched value and peace of mind. Choose excellence; choose RHFAC16244K02V!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust ceramic and metal-sealed cofired package provides excellent durability and environmental protection, making the product suitable for harsh conditions.

Propagation Delay At Nominal Supply: 11.5 ns

With a low propagation delay of 11.5 ns, this product allows for high-speed data processing, enhancing overall performance in fast applications.

Surface Mount: YES

The surface mount design enables easier integration into modern circuit boards, allowing for more compact and efficient layouts.

No. of Functions: 4

Having four functions provides versatility, allowing the device to serve multiple roles in a single application, thus reducing component count.

Screening Level: MIL-PRF-38535 Class V

This military-grade screening ensures that the device meets high reliability and performance standards, making it suitable for critical applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, facilitating efficient design integration.

No. of Bits: 4

The 4-bit capability allows for efficient data transfer and processing, ideal for applications requiring multiple signal paths.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3 V aligns with modern logic levels, making it compatible with most current digital systems.

Load Capacitance (CL): 50 pF

A low load capacitance of 50 pF enhances performance and reduces power consumption, leading to longer battery life in portable applications.

Power Supplies (V): 3.3/5

The ability to operate at both 3.3 V and 5 V allows for flexibility in various application environments, accommodating legacy and modern systems.

No. of Terminals: 48

With 48 terminals, the device offers ample connectivity options, supporting complex configurations and increasing design flexibility.

Package Style (Meter): FLATPACK

The flatpack style is ideal for applications with height constraints, allowing for a sleeker design profile.

Maximum I (ol): 24 Amp

A high maximum output current of 24 Amps enables the product to drive large loads, making it suitable for demanding applications.

Propagation Delay (tpd): 11.5 ns

This specification reiterates the high-speed performance of the device, essential for time-sensitive applications.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliability and performance in high-temperature environments commonly found in industrial applications.

Output Characteristics: 3-STATE

The 3-state output characteristic maximizes flexibility in bus systems, allowing multiple devices to share the same lines without interference.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, the device is suited for extreme weather conditions and harsh environments.

Terminal Position: DUAL

The dual terminal positioning aids in effective PCB layout, promoting easier routing and optimizing signal integrity.

No. of Ports: 2

Having two ports allows for dual functionality, enabling connection to multiple devices while maintaining data integrity.

Maximum Seated Height: 2.72 mm

With a low maximum seated height, this device is ideal for low-profile applications where space is at a premium.

Width: 9.65 mm

The compact width facilitates tight layouts and contributes to overall space-saving design strategies.

Output Polarity: TRUE

True output polarity ensures compatibility with standard logic levels, enhancing interoperability across various systems.

Minimum Supply Voltage (Vsup): 2 V

Supporting a minimum supply voltage of 2 V allows for operation in low-power applications, contributing to energy efficiency.

Length: 15.75 mm

The appropriate length provides balance in size, making it suitable for space-constrained applications while maintaining functionality.

Temperature Grade: MILITARY

The military temperature grade ensures that the product can withstand extreme conditions, making it reliable for defense and aerospace applications.

Total Dose (V): 300k Rad(Si)

A total dose tolerance of 300k Rad(Si) makes the product suitable for environments with high radiation levels, such as space applications.

Technology: CMOS

CMOS technology allows for lower power consumption and higher density integration, ensuring efficient performance and reliability.

Terminal Form: FLAT

Flat terminal form contributes to ease of soldering and improves thermal performance, enhancing overall device reliability.

Packing Method: TR

Tape and reel (TR) packing method ensures ease of handling and efficient assembly processes, streamlining manufacturing.

Terminal Pitch: 0.635 mm

A terminal pitch of 0.635 mm provides adequate spacing for reliable connections while accommodating high-density layouts.

Control Type: ENABLE LOW

The enable low control type allows for straightforward integration into control systems, simplifying design and reducing complexity.

Maximum Supply Voltage (Vsup): 6 V

The ability to operate at a maximum supply voltage of 6 V gives designers the flexibility to cater to various application needs.

Technical Specifications

Bus Driver & Transceivers RHFAC16244K02V attributes and parameters. Explore more Bus Driver & Transceivers devices from STMicroelectronics

Specs

Control Type:

ENABLE LOW

Family:

AC

JESD-30 Code:

R-CDFP-F48

Length:

15.75 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

4

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

FL48,.4,25

Package Shape:

Package Style (Meter):

FLATPACK

Packing Method:

TR

Power Supplies (V):

3.3/5

Propagation Delay At Nominal Supply:

11.5 ns

Propagation Delay (tpd):

11.5 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class V

Maximum Seated Height:

2.72 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Total Dose (V):

300k Rad(Si)

Width:

9.65 mm

Trade Compliance

RHFAC16244K02V Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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