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P0115DA1AA3

STMicroelectronics

P0115DA1AA3 by STMicroelectronics

P0115DA1AA3 by STMicroelectronics is a SCR with max DC Gate Trigger Current of 0.05mA, Non Repetitive Peak On-state Current of 8A, and Repetitive Peak Reverse Voltage of 400V. It is used in applications requiring high current switching capabilities in a compact ROUND package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,892 parts In-Stock

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3,892

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ECAB

Sweden . 2,150 parts In-Stock

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2,150

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Anansix

USA . 1,716 parts In-Stock

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1,716

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Digiode

USA . 1,310 parts In-Stock

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1,310

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,497 parts In-Stock

1+ parts

$2.421

100+ parts

-

1k+ parts

$2.179

10k+ parts

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1,497

$2.421

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$2.179

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MKK Technologies

India . 1,623 parts In-Stock

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$4.553

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1,623

$4.553

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DigiPath Technology Company

USA . 1,623 parts In-Stock

1+ parts

$4.553

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1,623

$4.553

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AZTECH Wire

Italy . 774 parts In-Stock

1+ parts

$12.190

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774

$12.190

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Ampacity Inc.

Singapore . 1,617 parts In-Stock

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$15.100

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1,617

$15.100

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QUARKTWIN TECHNOLOGY LTD

USA . 6,597 parts In-Stock

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6,597

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Perfect Parts

USA . 5,600 parts In-Stock

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5,600

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Corphita

USA . 1,435 parts In-Stock

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1,435

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Parana Technologies

USA . 78 parts In-Stock

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$2.895

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78

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$2.895

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Overview

Unlock the power of reliable and efficient electrical control with the P0115DA1AA3 by STMicroelectronics. As a leader in semiconductor manufacturing, STMicroelectronics delivers top-tier quality and performance. Designed as a Silicon Controlled Rectifier (SCR), this product is ideal for a wide range of applications, from industrial automation to consumer electronics. With a maximum on-state current of 0.5A and maximum RMS on-state current of 0.8A, the P0115DA1AA3 offers exceptional value and benefits for customers seeking high-performance components. Trust STMicroelectronics to provide superior products that meet your needs with precision and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the silicon controlled rectifier, ensuring a longer lifespan and reliable performance.

Maximum DC Gate Trigger Current: 0.05 mA

The low gate trigger current allows for efficient control of the SCR, making it suitable for applications where low power consumption is desired.

Configuration: SINGLE

The single configuration simplifies the design and usage of the SCR, making it easier to integrate into electronic systems.

Non Repetitive Peak On-state Current: 8 A

The high peak on-state current capability of 8A makes this SCR suitable for applications that require handling larger currents.

Package Shape: ROUND

The round package shape allows for easy installation and mounting in various electronic devices or systems.

Terminal Form: WIRE

The wire terminals enable easy and secure connections, ensuring reliable electrical connections in the system.

Maximum On-state Current: 0.5 A

The 0.5A maximum on-state current rating indicates the SCR's capability to handle moderate current loads effectively.

Maximum Leakage Current: 0.1 mA

The low leakage current of 0.1 mA ensures that the SCR maintains minimal power loss when in the off state.

Repetitive Peak Reverse Voltage: 400 V

The high reverse voltage rating of 400V allows the SCR to withstand reverse voltage conditions, making it suitable for various applications.

No. of Terminals: 3

The three terminals provide easy connections and control options for the SCR, enhancing its usability in electronic circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design for the SCR, making it suitable for applications with limited space.

Maximum Operating Temperature: 125 °C

The high operating temperature range of up to 125 °C ensures the SCR can operate reliably in a wide range of environments and applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise and controlled switching characteristics, making it suitable for power control applications.

Minimum Operating Temperature: -40 °C

The SCR can operate efficiently in cold environments with a minimum operating temperature of -40 °C, providing versatility for various applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and installation of the SCR in electronic systems, facilitating efficient heat dissipation.

Maximum RMS On-state Current: 0.8 A

The 0.8A maximum RMS on-state current rating indicates the SCR's ability to handle continuous current flows without overheating or damage.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage of 0.8V ensures efficient and precise control of the SCR, allowing for reliable operation in various circuits.

Repetitive Peak Off-state Voltage: 400 V

The 400V repetitive peak off-state voltage rating indicates the SCR's ability to withstand high voltage spikes, making it suitable for power control applications.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/us

The minimum critical rate of rise of off-state voltage of 75 V/µs ensures the SCR can respond quickly to voltage changes, providing accurate power control.

Maximum Holding Current: 5 mA

The maximum holding current of 5 mA indicates the SCR's ability to maintain the on-state current without external control signals, enhancing its reliability in power control applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) P0115DA1AA3 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.05 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

P0115DA1AA3 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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