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2N1598

Texas Instruments

2N1598 by Texas Instruments

2N1598 by Texas Instruments is a SCR with 10mA DC Gate Trigger Current, 15A Non Repetitive Peak On-state Current, and 1A Max On-state Current. It is used in applications requiring high current switching such as power control circuits.

Median Price

$14.145

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Ace Electronics

USA . 17 parts In-Stock

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$5.000

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Bristol Electronics

USA . 350 parts In-Stock

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$11.370

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$6.822

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$6.538

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$11.370

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American Microsemiconductor Inc.

USA . 115 parts In-Stock

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$16.920

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TEDSS.com

USA . 391 parts In-Stock

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$28.000

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Vyrian

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Digiode

USA . 6,402 parts In-Stock

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Anansix

USA . 1,128 parts In-Stock

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DigiKey Marketplace

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Electronic Expediters

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Corel Iberica Componentes, S.L.

Spain . 22 parts In-Stock

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ECAB

Sweden . 14 parts In-Stock

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Electronics Depot

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Native Components

USA . 578 parts In-Stock

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$0.078

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$0.075

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$0.075

Northwest PG Solutions

USA . 4,265 parts In-Stock

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$0.086

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$0.076

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$0.086

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$0.076

One Stop Electronics

USA . 432 parts In-Stock

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$1.100

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IDEA Electronic Components Group

UK . 2,456 parts In-Stock

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$2.725

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$2.453

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ChromeModa Solutions

Germany . 4,781 parts In-Stock

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$3.695

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$3.030

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DigiPath Technology Company

USA . 3,313 parts In-Stock

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MKK Technologies

India . 1,549 parts In-Stock

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AZTECH Wire

Italy . 440 parts In-Stock

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Microchip USA

USA . 3,211 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,139 parts In-Stock

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Corphita

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Supply Digital

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Parana Technologies

USA . 1,616 parts In-Stock

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Assy Fe

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Overview

Discover the unmatched quality and reliability of the Texas Instruments 2N1598 Silicon Controlled Rectifier. Designed for a wide range of applications, this SCR offers customers outstanding performance and durability. With a maximum DC Gate Trigger Current of 10 mA and a Non Repetitive Peak On-state Current of 15 A, this product ensures seamless operation under various conditions. Trust in Texas Instruments to deliver exceptional products that exceed expectations. Elevate your projects with the innovative technology and value that the 2N1598 SCR provides.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material ensures durability and efficient heat dissipation, making it suitable for high power applications.

Maximum DC Gate Trigger Current: 10 mA

Low gate trigger current allows for precise control of the SCR, ensuring reliable operation.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it a cost-effective choice.

Non Repetitive Peak On-state Current: 15 A

The high non-repetitive peak on-state current capability makes this SCR suitable for applications requiring temporary high current loads.

Package Shape: ROUND

The round package shape allows for easy installation and integration into various electronic systems.

Terminal Form: WIRE

The wire terminal form provides a reliable connection, ensuring stable performance in demanding environments.

Maximum On-state Current: 1 A

The maximum on-state current rating of 1 A allows for handling moderate power loads with efficiency.

Maximum Leakage Current: 1 mA

Low leakage current helps in minimizing power losses and ensures energy efficiency.

Repetitive Peak Reverse Voltage: 300 V

The high repetitive peak reverse voltage rating of 300 V offers protection against voltage spikes and overloads.

No. of Terminals: 3

Having 3 terminals allows for easy connection and control in circuits, enhancing the versatility of the SCR.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor, making it suitable for space-constrained applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature rating of 125°C ensures reliable performance in demanding thermal environments.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over switching applications with high reliability.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C enables operation in cold climates or industrial applications with extreme temperatures.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and integration into electronic systems.

Maximum RMS On-state Current: 1 A

The maximum RMS on-state current of 1 A ensures efficient handling of AC loads with minimal power losses.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage ensures efficient control and triggering of the SCR under low voltage conditions.

Case Connection: ANODE

The anode case connection provides a convenient point for connecting the anode terminal, simplifying the circuit design.

Repetitive Peak Off-state Voltage: 300 V

The repetitive peak off-state voltage rating of 300 V ensures protection against voltage spikes and transient conditions.

Maximum Holding Current: 5 mA

The maximum holding current of 5 mA ensures stable operation and prevents unintentional triggering of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N1598 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

10 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

15 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

300 V

Repetitive Peak Reverse Voltage:

300 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

2N1598 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-00-067-8068, 5961000678068, 5961-14-257-3946, 5961142573946

NIIN

000678068, 142573946

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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