Loading...

M93S46-BN3TG

STMicroelectronics

M93S46-BN3TG by STMicroelectronics

M93S46-BN3TG by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It operates b/w -40 °C to 125 °C, making it ideal for automotive applications. Its compact design features an 8-terminal in-line package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,925

-

-

-

-

Vyrian

USA . 4,036 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,036

-

-

-

-

Anansix

USA . 1,195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,195

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,009 parts In-Stock

1+ parts

$3.390

100+ parts

-

1k+ parts

$3.051

10k+ parts

-

1,009

$3.390

-

$3.051

-

MKK Technologies

India . 286 parts In-Stock

1+ parts

$6.375

100+ parts

-

1k+ parts

-

10k+ parts

-

286

$6.375

-

-

-

DigiPath Technology Company

USA . 286 parts In-Stock

1+ parts

$6.375

100+ parts

-

1k+ parts

-

10k+ parts

-

286

$6.375

-

-

-

Corphita

USA . 3,574 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,574

-

-

-

-

Parana Technologies

USA . 586 parts In-Stock

1+ parts

-

100+ parts

$4.054

1k+ parts

-

10k+ parts

-

586

-

$4.054

-

-

Overview

Unlock the power of reliability with the M93S46-BN3TG EEPROM from STMicroelectronics. Renowned for its superior quality and robust design, this memory solution is ideal for diverse applications, from automotive to industrial sectors. With a wide operating temperature range and synchronous mode, it offers unmatched performance and durability. Choose STMicroelectronics for exceptional value and peace of mind, as you elevate your projects with cutting-edge technology that stands the test of time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection from environmental factors.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCB, allowing for easier integration into various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation supports faster data transfer rates, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

The standard 5V supply voltage is widely compatible with various electronic systems, simplifying design requirements.

No. of Terminals: 8

A compact number of terminals makes this EEPROM easy to integrate into tight spaces.

Package Style (Meter): IN-LINE

In-line package style enhances easier mounting and soldering in circuit board assemblies.

Maximum Operating Temperature: 125 °C

High-temperature tolerance makes this EEPROM suitable for automotive and harsh environments.

Organization: 64X16

The memory organization allows effective data management for various applications, enhancing flexibility.

Minimum Operating Temperature: -40 °C

Ability to operate in low temperatures extends the usability range, suitable for extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides enhanced solderability and reduces corrosion, ensuring long-term reliability.

Terminal Position: DUAL

Dual position terminals increase connection security, ensuring stable operation in dynamic environments.

Maximum Seated Height: 5.33 mm

Low seated height allows for more compact designs and potential space-saving on PCBs.

Maximum Clock Frequency (fCLK): 2 MHz

High clock frequency supports quick data read/write operations, enhancing overall system speed.

Width: 7.62 mm

Compact width enables integration in smaller designs without sacrificing performance.

Minimum Supply Voltage (Vsup): 4.5 V

A low minimum supply voltage facilitates compatibility with a wide range of power sources.

Length: 9.27 mm

Compact length contributes to overall size reduction in electronic components layout.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliability and durability in vehicles and outdoor applications.

Technology: CMOS

CMOS technology allows for low power consumption and high-speed operation, making it energy efficient.

Parallel or Serial: SERIAL

Serial interface simplifies wiring and reduces pin counts, making it easier to integrate into existing systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical connections, preferred for high-vibration environments.

No. of Words: 64 words

The number of words offers sufficient memory capacity for a variety of applications.

Memory Width: 16

A 16-bit memory width provides efficiency in data processing and storage for complex applications.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for compatibility with various PCB designs and easy assembly.

No. of Words Code: 64

Consistency in word count enhances memory management and programming simplicity.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage ensures stability and operational effectiveness in high-power applications.

Serial Bus Type: MICROWIRE

The Microwire bus type supports high-speed communication, providing fast data access and transfer.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms supports efficient data updates, critical for dynamic applications.

Memory Density: 1024 bit

A memory density of 1024 bits provides enough storage for a number of application needs without excessive space.

Memory IC Type: EEPROM

Being an EEPROM type memory allows for non-volatile data storage, retaining information without power.

Technical Specifications

EEPROM M93S46-BN3TG attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

MICROWIRE

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

M93S46-BN3TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19