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M93S46-BN3/W

STMicroelectronics

M93S46-BN3/W by STMicroelectronics

STMicroelectronics' M93S46-BN3/W is a 1024-bit EEPROM with 64x16 organization, operating at -40 to 125 °C. It features hardware/software write protection, MICROWIRE serial bus type, and 1000000 Write/Erase Cycles endurance. Ideal for automotive applications due to its CMOS technology and low standby current of 0.00001 Amp.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,354 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

4,354

-

-

-

-

Vyrian

USA . 3,271 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,271

-

-

-

-

ComSIT Distribution GmbH

Germany . 3,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,100

-

-

-

-

ComSIT USA

USA . 3,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,100

-

-

-

-

Anansix

USA . 903 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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903

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,008 parts In-Stock

1+ parts

$3.670

100+ parts

-

1k+ parts

$3.303

10k+ parts

-

2,008

$3.670

-

$3.303

-

MKK Technologies

India . 1,712 parts In-Stock

1+ parts

$6.901

100+ parts

-

1k+ parts

-

10k+ parts

-

1,712

$6.901

-

-

-

DigiPath Technology Company

USA . 1,712 parts In-Stock

1+ parts

$6.901

100+ parts

-

1k+ parts

-

10k+ parts

-

1,712

$6.901

-

-

-

Corphita

USA . 3,804 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,804

-

-

-

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Parana Technologies

USA . 1,692 parts In-Stock

1+ parts

-

100+ parts

$4.388

1k+ parts

-

10k+ parts

-

1,692

-

$4.388

-

-

Overview

Unlock the power of reliable data storage with the M93S46-BN3/W from STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-notch quality and durability in their EEPROM products. Ideal for automotive applications, this EEPROM offers customers peace of mind with its hardware/software write protection and long data retention time. With 1024 bits of memory density and 1000000 write/erase cycles, the M93S46-BN3/W provides exceptional value and performance for all your memory needs. Trust in STMicroelectronics to deliver excellence in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, ensuring compatibility with most systems.

Maximum Operating Temperature: 125 °C

Allows the EEPROM to function reliably even in high temperature environments.

Organization: 64X16

Offers a good balance between memory capacity and organization for efficient data storage.

Write Protection: HARDWARE/SOFTWARE

Ensures data security by allowing users to protect the EEPROM from unauthorized writes.

Technology: CMOS

Utilizes CMOS technology for low power consumption and efficient operation.

Memory Density: 1024 bit

Provides sufficient memory capacity for storing important data and settings.

No. of Words Code: 64

Offers a good balance between data granularity and overall memory usage.

Endurance: 1000000 Write/Erase Cycles

Ensures long-term reliability and durability for frequent read/write operations.

Serial Bus Type: MICROWIRE

Utilizes the efficient MICROWIRE serial bus for data communication and transfer.

Technical Specifications

EEPROM M93S46-BN3/W attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.00001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M93S46-BN3/W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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