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M93S46-DS3G

STMicroelectronics

M93S46-DS3G by STMicroelectronics

M93S46-DS3G by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It features hardware/software write protection and operates in extreme temperatures from -40 °C to 125 °C. Ideal for automotive applications, it ensures reliable data retention with up to 1M write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,230 parts In-Stock

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4,230

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Anansix

USA . 2,312 parts In-Stock

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2,312

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Vyrian

USA . 869 parts In-Stock

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869

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,270 parts In-Stock

1+ parts

$5.383

100+ parts

-

1k+ parts

$4.845

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1,270

$5.383

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$4.845

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MKK Technologies

India . 1,583 parts In-Stock

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$10.122

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1,583

$10.122

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DigiPath Technology Company

USA . 1,583 parts In-Stock

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$10.122

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1,583

$10.122

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Corphita

USA . 2,118 parts In-Stock

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2,118

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Parana Technologies

USA . 221 parts In-Stock

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$6.436

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221

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$6.436

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Overview

Unlock the power of reliable data storage with the M93S46-DS3G EEPROM from STMicroelectronics. Renowned for their innovation and quality, STMicroelectronics delivers a robust solution that excels in automotive applications, ensuring durability under extreme temperatures. Experience unparalleled write protection options and impressive endurance, empowering your devices with seamless performance and enhanced reliability. Elevate your projects with a trusted partner in advanced memory solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection from environmental factors, ensuring long-term reliability.

Surface Mount: YES

Surface mount technology allows for efficient use of space on PCBs, making this EEPROM suitable for compact designs.

Package Shape: SQUARE

The square package shape optimizes layout and spacing on circuit boards, enhancing design flexibility.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for fast and efficient data access, improving system performance in applications.

Nominal Supply Voltage / Vsup: 5V

A nominal supply voltage of 5V is compatible with standard digital circuits, simplifying integration.

Power Supplies: 5V

Operating at 5V aligns with commonly available power supplies, streamlining power management in designs.

No. of Terminals: 8

Having 8 terminals facilitates ease of connection in various circuit configurations, enhancing versatility.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and small outline of the package are ideal for space-constrained applications, promoting compact devices.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliability in demanding automotive applications with high thermal conditions.

Organization: 64X16

The organization of 64x16 provides a well-structured memory layout, facilitating efficient data management.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this EEPROM is suitable for extreme environments, such as automotive applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish enhances solderability and corrosion resistance, contributing to reliable long-term performance.

Terminal Position: DUAL

Dual terminal positioning enhances stability during soldering and improves connections in various mounting configurations.

Write Protection: HARDWARE/SOFTWARE

The dual write protection mechanism offers additional data integrity and security against unintended writes.

Maximum Seated Height: 1.1 mm

A low seated height contributes to a slimmer profile in designs, enabling ultra-compact device applications.

Maximum Clock Frequency (fCLK): 2 MHz

A maximum clock frequency of 2 MHz allows for rapid data transfer rates, improving overall system responsiveness.

Width: 3 mm

A width of 3 mm aids in space-saving designs while maintaining functionality in tight environments.

Minimum Supply Voltage (Vsup): 4.5V

Support for a minimum supply voltage of 4.5V allows flexible operation in various power environments.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum peak reflow time of 30 seconds indicates suitability for standard soldering processes in manufacturing.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature is compatible with lead-free soldering processes, aligning with modern manufacturing standards.

Length: 3 mm

At 3 mm in length, this EEPROM is designed to fit into compact applications, making it versatile for various uses.

Temperature Grade: AUTOMOTIVE

Grade specifically for automotive usage ensures performance and reliability in vehicles under varying conditions.

Technology: CMOS

CMOS technology ensures low power consumption, which is ideal for battery-operated and energy-efficient devices.

Parallel or Serial: SERIAL

Serial communication simplifies wiring and reduces pin count, making integration into tight-fitting spaces easier.

Terminal Form: GULL WING

Gull wing terminals facilitate effective soldering and improves mechanical strength of connections on PCBs.

Maximum Supply Current: 2 mA

The low maximum supply current helps to conserve power, making it suitable for battery-operated applications.

No. of Words: 64 words

With a capacity of 64 words, it is ideal for small data storage applications, offering just the right amount of memory.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling and simplifies communication protocols.

Minimum Data Retention Time: 40 years

A minimum data retention time of 40 years ensures that stored data remains intact, providing excellent reliability.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm supports compact designs while providing ease of connectivity in smaller layouts.

No. of Words Code: 64

The capacity to address 64 words ensures adequate storage for various applications, balancing size and capability.

Maximum Supply Voltage (Vsup): 5.5V

The support for a maximum voltage of 5.5V provides a wide operating range, accommodating various power supply scenarios.

Endurance: 1,000,000 Write/Erase Cycles

An endurance rating of 1 million cycles ensures reliability and longevity for data-intensive applications.

Maximum Write Cycle Time (tWC): 5 ms

Fast maximum write cycle time of 5 ms enhances performance during data updates, especially in real-time applications.

Memory Density: 1024 bit

With a density of 1024 bits, this EEPROM is perfectly suited for applications requiring moderate data storage capacity.

Memory IC Type: EEPROM

As an EEPROM type, it supports non-volatile memory features, retaining data without the need for power.

Maximum Standby Current: 0.000015 A

Extremely low maximum standby current minimizes energy consumption during idle states, ideal for power-sensitive designs.

Technical Specifications

EEPROM M93S46-DS3G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M93S46-DS3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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