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M93S46-DS3

STMicroelectronics

M93S46-DS3 by STMicroelectronics

M93S46-DS3 from STMicroelectronics is a 1024-bit EEPROM with a 5V supply, ideal for automotive applications. It features a max clock frequency of 2 MHz and supports hardware/software write protection. Its compact design ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,764 parts In-Stock

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4,764

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Vyrian

USA . 3,267 parts In-Stock

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3,267

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Anansix

USA . 1,675 parts In-Stock

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1,675

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,400 parts In-Stock

1+ parts

$5.170

100+ parts

-

1k+ parts

$4.653

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1,400

$5.170

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$4.653

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MKK Technologies

India . 1,823 parts In-Stock

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$9.723

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1,823

$9.723

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DigiPath Technology Company

USA . 1,823 parts In-Stock

1+ parts

$9.723

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1,823

$9.723

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Corphita

USA . 3,866 parts In-Stock

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3,866

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Parana Technologies

USA . 1,462 parts In-Stock

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$6.182

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1,462

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$6.182

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Overview

Unlock the potential of your designs with the M93S46-DS3 EEPROM from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution that excels in automotive applications. With advantages like robust data retention, low power consumption, and flexible write protection options, the M93S46-DS3 ensures your projects run smoothly and efficiently, providing exceptional value and peace of mind for engineers and developers alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability, making the EEPROM suitable for various applications and improving reliability.

Surface Mount: YES

As a surface mount device, this EEPROM is ideal for space-constrained applications, allowing for easier integration into modern circuit designs.

Package Shape: SQUARE

The square package shape offers uniform dimensions that help simplify PCB layout and design.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances data transfer rates, facilitating faster access and improved performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common nominal supply voltage of 5V makes this EEPROM easily compatible with standard microcontroller systems.

Power Supplies (V): 5

Single supply voltage simplifies power management and reduces the number of components needed in the design.

No. of Terminals: 8

With 8 terminals, this device allows for convenient connections and is manageable in terms of physical layout.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design is excellent for compact designs, enabling higher density mounting on PCBs.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliable performance in demanding automotive environments.

Organization: 64X16

The memory organization of 64x16 allows for efficient data storage and retrieval, suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C allows for use in harsh environments, making it suitable for automotive and industrial applications.

Terminal Finish: TIN LEAD

Tin-lead terminals provide good solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in PCB design, allowing multiple mounting orientations.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection mechanisms ensures data integrity and security, making it ideal for critical applications.

Maximum Seated Height: 1.1 mm

A low maximum seated height of 1.1 mm enables more compact designs, contributing to reduced overall system dimensions.

Maximum Clock Frequency (fCLK): 2 MHz

A maximum clock frequency of 2 MHz allows for swift data reading and writing, enhancing performance in applications.

Width: 3 mm

The small width of 3 mm makes it suitable for high-density applications where space is a premium.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5 V ensures compatibility with systems operating slightly below the standard 5V.

Length: 3 mm

A compact length of 3 mm complements the width, making it an excellent choice for space-constrained designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this EEPROM ensures reliability and consistent performance under extreme conditions.

Technology: CMOS

CMOS technology offers low power consumption and high density, contributing to energy-efficient designs.

Parallel or Serial: SERIAL

Serial interface allows for simpler wiring and reduced pin count, making it easier to integrate into circuit designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and placement, ensuring reliable connections and manufacturing efficiency.

Maximum Supply Current: 2 mA

A maximum supply current of only 2 mA helps keep overall system power consumption low, advantageous for battery-operated devices.

No. of Words: 64 words

With a capacity to store 64 words, it provides sufficient storage for many applications without requiring excessive memory space.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling, suitable for a variety of digital applications.

Minimum Data Retention Time: 40 years

Long data retention time of 40 years guarantees that important data remains stored reliably even without power.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm allows for compatibility with modern PCB technologies and helps in maintaining a compact design.

No. of Words Code: 64

Equipped with 64 words coding capability, it simplifies data management and enhances performance in practical applications.

Maximum Supply Voltage (Vsup): 5.5 V

The flexibility of a maximum supply voltage of 5.5 V supports a wider range of system designs and voltage tolerances.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1,000,000 write/erase cycles ensures long-term reliability in applications requiring frequent updates.

Serial Bus Type: MICROWIRE

Utilizing the MICROWIRE serial bus type offers a straightforward communication method that reduces complexity in design.

Maximum Write Cycle Time (tWC): 5 ms

Fast maximum write cycle time of 5 ms improves the efficiency of data writing operations, ideal for real-time applications.

Memory Density: 1024 bit

A memory density of 1024 bits provides sufficient storage for small to medium-sized data, making it versatile for multiple uses.

Memory IC Type: EEPROM

As an EEPROM memory IC type, it supports non-volatile storage, ensuring data persistence even when power is lost.

Maximum Standby Current: 0.000015 A

Extremely low maximum standby current of 0.000015 A makes it energy-efficient, particularly beneficial for battery-powered applications.

Technical Specifications

EEPROM M93S46-DS3 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M93S46-DS3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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