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M93S46-BN3P

STMicroelectronics

M93S46-BN3P by STMicroelectronics

M93S46-BN3P by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It features hardware/software write protection and operates in automotive applications, ensuring reliability from -40 °C to 125 °C. With an endurance of 1M write/erase cycles, it's ideal for data storage in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,527 parts In-Stock

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3,527

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Anansix

USA . 1,752 parts In-Stock

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1,752

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Digiode

USA . 445 parts In-Stock

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445

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IDEA Electronic Components Group

UK . 233 parts In-Stock

1+ parts

$4.591

100+ parts

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$4.132

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233

$4.591

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$4.132

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MKK Technologies

India . 1,468 parts In-Stock

1+ parts

$8.633

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1,468

$8.633

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DigiPath Technology Company

USA . 1,468 parts In-Stock

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$8.633

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1,468

$8.633

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Corphita

USA . 4,450 parts In-Stock

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4,450

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Parana Technologies

USA . 1,827 parts In-Stock

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$5.489

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1,827

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$5.489

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Overview

Unlock the potential of your next project with the M93S46-BN3P from STMicroelectronics, a leader in high-quality memory solutions. This robust EEPROM offers unparalleled reliability across automotive applications, ensuring performance even in extreme temperatures. With its user-friendly design and advanced write protection features, you can trust it to safeguard your data while enjoying fast, efficient operation. Elevate your designs and experience peace of mind with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures reliable performance and protection against environmental factors.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization in PCB designs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and improved performance in applications.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V operation makes it compatible with numerous electronic circuits and power supplies.

Power Supplies (V): 5

Utilizing a single power supply voltage simplifies circuit design and reduces component count.

No. of Terminals: 8

The 8 terminals provide sufficient connections for essential functionalities while maintaining a compact footprint.

Package Style (Meter): IN-LINE

In-line packaging style is suitable for through-hole mounting, enhancing ease of assembly.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this EEPROM is suitable for high-temperature applications such as automotive.

Organization: 64X16

The 64x16 organization supports diverse data storage and manipulation needs for specific applications.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C makes it ideal for extreme environments like automotive and industrial applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and reduces oxidation, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for versatile layout options on circuit boards.

Write Protection: HARDWARE/SOFTWARE

The combination of hardware and software write protection enhances data integrity and security.

Maximum Seated Height: 5.33 mm

Low seated height allows for design flexibility and compact circuit layouts.

Maximum Clock Frequency (fCLK): 2 MHz

A 2 MHz clock frequency contributes to quicker data retrieval and processing times.

Width: 7.62 mm

The compact width optimizes space on PCBs, making it an effective choice for smaller devices.

Minimum Supply Voltage (Vsup): 4.5 V

Operating with a minimum voltage of 4.5V ensures reliable performance while maintaining compatibility.

Length: 9.27 mm

The small length enhances its suitability for tightly packed electronic designs.

Temperature Grade: AUTOMOTIVE

Automotive grade classification ensures reliability in demanding automotive environments.

Technology: CMOS

CMOS technology provides lower power consumption and higher efficiency compared to traditional technologies.

Parallel or Serial: SERIAL

Serial communication reduces the number of required connections, simplifying the circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and reliability in various mounting conditions.

Maximum Supply Current: 1.5 mA

Low supply current contributes to energy efficiency, making it suitable for battery-operated devices.

No. of Words: 64 words

A memory capacity of 64 words meets the needs for many applications while remaining compact.

Memory Width: 16

A 16-bit memory width allows for storing more data per access, enhancing performance.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years ensures long-term data reliability.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch is standard, making it easy to integrate with various circuit designs.

No. of Words Code: 64

64 words of addressing increases the versatility for various applications, expanding usability.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage provides a margin for power supply tolerances in real-world applications.

Endurance: 1000000 Write/Erase Cycles

With a high endurance rating, it ensures longevity and reliability for frequent data updating.

Serial Bus Type: MICROWIRE

The MICROWIRE bus type allows for simple integration and communication with various microcontrollers.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time of 5 ms enhances the responsiveness of applications requiring rapid data updates.

Memory Density: 1024 bit

A memory density of 1024 bits provides efficient data storage in a compact form factor.

Memory IC Type: EEPROM

EEPROM technology allows for non-volatile storage, retaining data without power and ensuring data integrity.

Maximum Standby Current: 0.00005 Amp

Extremely low standby current minimizes power consumption, making it efficient for battery-operated applications.

Technical Specifications

EEPROM M93S46-BN3P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.00005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M93S46-BN3P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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