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M93S46-BN6

STMicroelectronics

M93S46-BN6 by STMicroelectronics

M93S46-BN6 by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It features hardware/software write protection and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications, it ensures reliable data retention with up to 1M write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,791 parts In-Stock

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4,791

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Anansix

USA . 2,496 parts In-Stock

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2,496

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Digiode

USA . 2,344 parts In-Stock

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2,344

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North Shore Components

USA . 23 parts In-Stock

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23

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IDEA Electronic Components Group

UK . 983 parts In-Stock

1+ parts

$4.280

100+ parts

-

1k+ parts

$3.852

10k+ parts

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983

$4.280

-

$3.852

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MKK Technologies

India . 15 parts In-Stock

1+ parts

$8.048

100+ parts

-

1k+ parts

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15

$8.048

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DigiPath Technology Company

USA . 15 parts In-Stock

1+ parts

$8.048

100+ parts

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15

$8.048

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Corphita

USA . 2,611 parts In-Stock

1+ parts

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2,611

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Parana Technologies

USA . 671 parts In-Stock

1+ parts

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100+ parts

$5.117

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671

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$5.117

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Assy Fe

Spain . 100 parts In-Stock

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100

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Overview

Unlock unparalleled reliability and performance with the M93S46-BN6 EEPROM from STMicroelectronics, a leader in innovative semiconductor solutions. This compact, industrial-grade memory chip ensures data integrity even in extreme conditions, making it ideal for automotive, telecommunications, and consumer electronics applications. With robust write protection and impressive endurance, it delivers peace of mind and efficiency, empowering your designs with lasting quality and adaptability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for industrial applications.

Package Shape: RECTANGULAR

A rectangular shape facilitates efficient space utilization on circuit boards, allowing for compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 5 V

Standard supply voltage makes it compatible with a wide range of electronic systems.

Power Supplies (V): 5

Consistent power supply requirement simplifies design and integration into existing systems.

No. of Terminals: 8

An 8-terminal design provides adequate connectivity options while keeping the footprint minimal.

Package Style (Meter): IN-LINE

In-line package style is ideal for efficient assembly processes, optimizing inventory management and production.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, making it suitable for use in demanding industrial environments.

Organization: 64X16

This organization allows for efficient data storage and retrieval, suitable for various applications requiring moderate data capacity.

Minimum Operating Temperature: -40 °C

This wide temperature range eligibility makes it appropriate for extreme environmental conditions.

Terminal Finish: TIN LEAD

Tin-lead finish provides reliable solderability and ensures connections remain intact over time.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options, enhancing installation versatility.

Write Protection: HARDWARE/SOFTWARE

Dual write protection methods enhance data integrity and safety, critical for applications requiring reliable data preservation.

Maximum Seated Height: 5.33 mm

Compact height allows for integration into space-constrained applications without compromising performance.

Maximum Clock Frequency (fCLK): 2 MHz

Supports high-speed operations, improving data processing and system responsiveness.

Width: 7.62 mm

Narrow width facilitates compact circuit designs, saving board space for additional components.

Minimum Supply Voltage (Vsup): 4.5 V

A lower voltage requirement increases flexibility in powering the device while maintaining efficiency.

Length: 9.27 mm

Compact length aids in more effective component placement, maximizing circuit design potential.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability in harsh environments, making it a preferred choice for industrial electronics.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making it energy efficient.

Parallel or Serial: SERIAL

Serial communication reduces the number of required pins, simplifying PCB design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability, beneficial for high-stress applications.

Maximum Supply Current: 2 mA

Low supply current improves energy efficiency, suitable for battery-powered devices.

No. of Words: 64 words

Adequate word count for numerous small data storage applications, balancing capacity and simplicity.

Memory Width: 16

A 16-bit memory width allows for efficient data handling in various applications, improving performance.

Minimum Data Retention Time: 40 years

Long data retention time ensures that stored information remains intact over extended periods, critical for archival applications.

Terminal Pitch: 2.54 mm

A standard terminal pitch simplifies PCB design and assembly processes, providing compatibility with common manufacturing methods.

No. of Words Code: 64

Code indicates the device's flexibility for different applications that require moderate data storage.

Maximum Supply Voltage (Vsup): 5.5 V

A higher voltage tolerance allows for flexibility in power supply options without risking device integrity.

Endurance: 1000000 Write/Erase Cycles

High endurance capabilities make it suitable for applications requiring frequent updates and data modifications.

Serial Bus Type: MICROWIRE

Using the Microwire bus type streamlines communication processes, optimizing speed and efficiency.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time reduces data processing delays, improving overall system performance.

Memory Density: 1024 bit

A density of 1024 bits allows for effective storage of small data segments, supporting a wide range of applications.

Memory IC Type: EEPROM

As an EEPROM, it allows for non-volatile data storage, ensuring data is retained even without power.

Maximum Standby Current: 0.000015 Amp

Extremely low standby current enhances efficiency, making it ideal for battery-operated gadgets.

Technical Specifications

EEPROM M93S46-BN6 attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.27 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M93S46-BN6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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