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M58BW016BB100T3F

STMicroelectronics

M58BW016BB100T3F by STMicroelectronics

M58BW016BB100T3F from STMicroelectronics is a 16Mb NOR Flash memory with a 3V nominal voltage, operating in asynchronous mode. It features an automotive temperature grade and offers fast access times of up to 100 ns. Ideal for embedded applications, it supports parallel interface and has a compact flatpack design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,762 parts In-Stock

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2,762

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Vyrian

USA . 2,707 parts In-Stock

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2,707

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Anansix

USA . 1,335 parts In-Stock

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1,335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,083 parts In-Stock

1+ parts

$4.831

100+ parts

-

1k+ parts

$4.348

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1,083

$4.831

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$4.348

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MKK Technologies

India . 1,160 parts In-Stock

1+ parts

$9.084

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1,160

$9.084

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DigiPath Technology Company

USA . 1,160 parts In-Stock

1+ parts

$9.084

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1,160

$9.084

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Parana Technologies

USA . 2,250 parts In-Stock

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$5.776

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2,250

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$5.776

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Corphita

USA . 348 parts In-Stock

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348

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Overview

Unlock unparalleled performance with the M58BW016BB100T3F from STMicroelectronics. This high-quality NOR Flash Memory is engineered for automotive applications, delivering reliability even in extreme temperatures. With its compact design and low power consumption, it seamlessly integrates into your systems, enhancing efficiency and functionality. Trust STMicroelectronics for cutting-edge technology that drives innovation and ensures long-lasting value in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and automated manufacturing processes, reducing overall production costs.

Package Shape: RECTANGULAR

A rectangular package shape optimizes space on printed circuit boards and is commonly used in modern electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster access times, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is ideal for low-power applications, enhancing battery life in portable devices.

Power Supplies (V): 2.5/3.3, 3/3.3

Flexible power supply options (2.5/3.3V) allow for compatibility with a range of systems, increasing design versatility.

No. of Terminals: 80

With 80 terminals, the device can support a wide range of functionalities and complex configurations.

Package Style (Meter): FLATPACK

Flatpack design provides a low profile suitable for space-constrained applications and enhances thermal management.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes this product reliable for automotive applications where temperature extremes occur.

Organization: 512KX32

The 512Kx32 organization allows for efficient data storage and retrieval, catering to high-performance applications.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature ensures functionality in harsh environmental conditions, ideal for automotive and industrial use.

No. of Sectors/Size: 8, 31

Multiple sectors facilitate efficient data management and organization, enhancing performance and reliability.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides excellent solderability and reliability for long-term applications.

Terminal Position: QUAD

Quad terminal positioning allows for easier integration on boards, improving design flexibility.

Maximum Seated Height: 3.4 mm

A low seated height contributes to compact designs, allowing for more efficient use of space in electronic assemblies.

Width: 14 mm

The compact width facilitates integration into smaller devices, meeting the demands of modern electronics.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement improves energy efficiency, making it a great choice for battery-operated devices.

Type: NOR TYPE

NOR flash type memory is known for fast read speeds, making it ideal for applications requiring quick data access.

Common Flash Interface: YES

The common flash interface allows for easy integration into existing systems, reducing development time and costs.

Length: 20 mm

A manageable length supports various design configurations, making it suitable for a wide range of applications.

Programming Voltage (V): 3

A programming voltage of 3V is standard, ensuring compatibility with most programming equipment.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this flash memory ensures reliability and performance in demanding environments.

Technology: CMOS

CMOS technology provides low power consumption and high density, ideal for efficient and compact memory solutions.

Parallel or Serial: PARALLEL

The parallel interface allows for faster data transfer rates compared to serial interfaces, enhancing system performance.

Terminal Form: GULL WING

Gull wing terminal form offers stronger mechanical connection and better alignment during soldering.

Sector Size (Words): 2K, 16K

Flexible sector sizes accommodate different data storage requirements, improving versatility for various applications.

Maximum Supply Current: 30 mA

A maximum supply current of 30 mA balances performance and efficiency, making it suitable for low-power designs.

No. of Words: 524288 words

With 524288 words, this memory chip provides substantial storage capacity for demanding applications.

Memory Width: 32

A memory width of 32 bits aligns well with modern bus systems, enhancing compatibility and performance.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm is standard for many applications, facilitating compatibility with commonly used PCBs.

No. of Words Code: 512K

512K words provide a significant amount of memory, meeting the needs of various applications without compromising speed.

Command User Interface: YES

A command user interface allows for easier programming and control, simplifying integration into complex systems.

Maximum Supply Voltage (Vsup): 3.6 V

The flexibility in supply voltage (max 3.6V) ensures compatibility with a variety of power systems.

Boot Block: BOTTOM

The bottom boot block configuration enhances data integrity and performance during the boot process.

Memory Density: 16777216 bit

With a density of 16777216 bits, this memory offers ample space for firmware and data storage.

Memory IC Type: FLASH

Flash memory is non-volatile, making it ideal for applications that require data retention without power.

Maximum Standby Current: 0.000005 A

Ultra-low standby current ensures energy efficiency, making it well-suited for battery-powered devices.

Maximum Access Time: 100 ns

Fast access time of 100 ns enhances performance in read operations, beneficial for high-speed applications.

Technical Specifications

Flash Memory M58BW016BB100T3F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PQFP-G80

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Sectors/Size:

8,31

No. of Terminals:

80

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP80,.7X.9,32

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3,3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.4 mm

Sector Size (Words):

2K,16K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M58BW016BB100T3F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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