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M58BW32FB4ZA3F

Numonyx

M58BW32FB4ZA3F by Numonyx

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 80; Package Code: LBGA; Package Shape: RECTANGULAR; Page Size (words): 4;

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Chip Stock

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Nova Conductors

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North Shore Components

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Ampacity Inc.

Singapore . 1,324 parts In-Stock

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IDEA Electronic Components Group

UK . 1,425 parts In-Stock

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MKK Technologies

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DigiPath Technology Company

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AZTECH Wire

Italy . 596 parts In-Stock

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Component Stockers USA

USA . 428 parts In-Stock

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Continental Prestige Electronics

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Futuretech Components

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Parana Technologies

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Argo Parts USA

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Aranea Global

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Technical Specifications

Flash Memory M58BW32FB4ZA3F attributes and parameters. Explore more Flash Memory devices from Numonyx

Specs

Maximum Access Time:

45 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B80

Length:

12 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Sectors/Size:

4,8,62

No. of Terminals:

80

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA80,8X10,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Page Size (words):

4

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sector Size (Words):

4K,2K,16K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M58BW32FB4ZA3F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Numonyx

February 9, 2010 at 7:32 PM EST Micron Announces Agreement to Acquire Numonyx BOISE, Idaho and GENEVA, Feb 9, 2010 (GlobeNewswire via COMTEX News Network) -- Micron Technology, Inc. (Nasdaq:MU), and Numonyx Holdings B.V. announced today that the companies have signed a definitive agreement under which Micron has agreed to acquire privately held Numonyx in an all-stock transaction valuing Numonyx at approximately $1.27 billion USD. The transaction further strengthens Micron's position as one of the world's leading memory companies, with a broad portfolio of DRAM, NAND and NOR memory products and strong expertise in developing and supporting memory system solutions. Micron would also gain increased manufacturing scale globally and access to Numonyx's customer base, providing significant opportunities to increase multi-chip offerings in the embedded and mobile markets. "Acquiring Numonyx brings together two memory leaders and positions Micron to offer the most comprehensive, cost-competitive solutions in the industry to a broad range of customers and end-markets," said Steve Appleton, Chairman and CEO of Micron. "We believe the opportunity for Numonyx to join with Micron will deliver a clear advantage for our customers and our employees," said Brian Harrison, President and CEO of Numonyx. "This announcement is a strong testimony to the value of Numonyx technologies, products and people. The result will be a strong company that can best serve our target market segments and customers by delivering enhanced memory solutions, strength and scale. It is good for Numonyx and good for Micron.

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