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M58BF008100D3T

STMicroelectronics

M58BF008100D3T by STMicroelectronics

M58BF008100D3T from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and operates in synchronous mode. It features an automotive temperature grade, supporting -40 °C to 125 °C, and offers a max access time of 20ns. Ideal for high-performance applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,468 parts In-Stock

1+ parts

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1,468

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Vyrian

USA . 1,198 parts In-Stock

1+ parts

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1,198

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Anansix

USA . 750 parts In-Stock

1+ parts

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,117 parts In-Stock

1+ parts

$4.216

100+ parts

-

1k+ parts

$3.795

10k+ parts

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1,117

$4.216

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$3.795

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MKK Technologies

India . 592 parts In-Stock

1+ parts

$7.929

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592

$7.929

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DigiPath Technology Company

USA . 592 parts In-Stock

1+ parts

$7.929

100+ parts

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592

$7.929

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Corphita

USA . 3,491 parts In-Stock

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3,491

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Parana Technologies

USA . 1,156 parts In-Stock

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$5.041

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1,156

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$5.041

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Overview

Unlock unparalleled performance with the M58BF008100D3T Flash Memory from STMicroelectronics, a trusted leader in innovative technology. This automotive-grade memory solution excels in reliability and efficiency, making it perfect for demanding applications like advanced driver-assistance systems (ADAS) and infotainment. With robust temperature resilience and rapid access times, experience enhanced data integrity and speed that empower your designs while ensuring longevity and value. Choose quality that drives progress!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stress, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs, enabling higher density and efficient use of space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape facilitates straightforward design integration, allowing for simpler layout in electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation provides faster data transfer rates, enhancing performance in high-speed applications.

Nominal Supply Voltage / Vsup: 5V

A nominal supply voltage of 5V is standard for many systems, making this flash memory compatible with a variety of devices.

No. of Terminals: 80

With 80 terminals, the product offers ample connectivity options for reliable performance and high data throughput.

Package Style (Meter): FLATPACK

The flatpack package style is optimal for surface mounting, ensuring a lower profile and better thermal management.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures reliability in demanding environments, making it suitable for automotive applications.

Organization: 256KX32

The memory organization allows for efficient data handling and storage, providing flexibility for various applications.

Minimum Operating Temperature: -40 °C

Wide temperature tolerance (-40 °C) ensures performance in extreme conditions, ideal for automotive and industrial uses.

Terminal Position: QUAD

Quad terminal positions enhance signal integrity and reduce electromagnetic interference, leading to more stable performance.

Maximum Seated Height: 3.4 mm

The low seated height allows for compact designs, enabling the product to fit in smaller devices without compromising performance.

Width: 14 mm

Compact width makes it suitable for applications where space is a constraint, facilitating dense circuit board layouts.

Minimum Supply Voltage (Vsup): 4.5V

The minimum supply voltage of 4.5V provides flexibility in power management for various applications.

Type: NOR TYPE

NOR type memory is known for its fast read times, making it suitable for applications requiring quick data access.

Length: 20 mm

The compact length supports efficient use of PCB real estate, making integration into designs simpler.

Programming Voltage (V): 5V

Standard programming voltage of 5V ensures compatibility with a wide range of programming equipment and techniques.

Temperature Grade: AUTOMOTIVE

Automotive grade ensures this flash memory can withstand the rigors of automotive environments, enhancing reliability and safety.

Technology: CMOS

CMOS technology allows for lower power consumption and increased speed, making this product efficient for high-performance applications.

Parallel or Serial: PARALLEL

Parallel access speeds up data transfer rates, making this memory suitable for applications that require quick data retrieval.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure a strong physical connection to the PCB.

No. of Words: 262144 words

A memory capacity of 262144 words provides ample storage for complex applications and data sets.

Memory Width: 32

A memory width of 32 bits enhances performance and data throughput, allowing for efficient data processing.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm is ideal for high-density designs, allowing for more terminals in a compact layout.

No. of Words Code: 256K

With a capacity of 256K words, it is suitable for storing a significant amount of data in a compact form.

Maximum Supply Voltage (Vsup): 5.5V

The maximum supply voltage of 5.5V allows for slight fluctuations in power supply, ensuring reliable operation.

Memory Density: 8388608 bits

High memory density indicates the ability to store large volumes of data efficiently, ideal for memory-intensive applications.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, retaining data without power and offering flexibility for various applications.

Maximum Access Time: 20 ns

A low maximum access time of 20 ns ensures quick data retrieval, enhancing system performance in time-sensitive applications.

Technical Specifications

Flash Memory M58BF008100D3T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

20 ns

JESD-30 Code:

R-PQFP-G80

Length:

20 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Terminals:

80

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX32

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.4 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M58BF008100D3T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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